MOSFET, N, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:15A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:2.5W RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 97K0155 |
| Product Name | Mosfet, N, D-Pak; Channel Type Onsemi |
| IDSS | 15000 milliamps |