onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD17N08LTM FQD17N08LTM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039697-FQD17N08LTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 12.9A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 11.5nC @ 5V Max Input Capacitance: 520pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 6.45A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Quantity per package: 2,500
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039697-FQD17N08LTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 12.9A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 11.5nC @ 5V Max Input Capacitance: 520pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 6.45A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD17N08LTM - 1039697-FQD17N08LTM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD17N08LTM
1039697-FQD17N08LTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD17N08LTM 1039697-FQD17N08LTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039697-FQD17N08LTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 12.9A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 11.5nC @ 5V Max Input Capacitance: 520pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 6.45A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039697-FQD17N08LTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 12.9A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 11.5nC @ 5V
Max Input Capacitance: 520pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 6.45A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FQD17N08LTM - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQD17N08LTM
Single FETs, MOSFETs FQD17N08LTM
MOSFET N-CH 80V 12.9A TO252

MOSFET N-CH 80V 12.9A TO252

Supplier's Site Datasheet
Single FETs, MOSFETs - FQD17N08LTMTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD17N08LTMTR-ND
Single FETs, MOSFETs FQD17N08LTMTR-ND
N-Channel 80V 12.9A (Tc) 2.5W (Ta), 40W (Tc) Surface Mount D-Pak

N-Channel 80V 12.9A (Tc) 2.5W (Ta), 40W (Tc) Surface Mount D-Pak

Buy Now Datasheet
Singapore
N-Channel 80V 12.9A DPAK MOSFET Transistor
278-FQD17N08LTM
N-Channel 80V 12.9A DPAK MOSFET Transistor 278-FQD17N08LTM
N-Channel MOSFET, 80V, 12.9A, 100mR, Logic Level, DPAK Product overview: FQD17N08LTM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80V, 12.9A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 12.9A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD17N08LTM can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 80V, 12.9A, 100mR, Logic Level, DPAK Product overview: FQD17N08LTM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80V, 12.9A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 12.9A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD17N08LTM can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD17N08LTM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD17N08LTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD17N08LTM
MOSFET N-CH 80V 12.9A TO252

MOSFET N-CH 80V 12.9A TO252

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 80V N-Channel QFET Logic Level

MOSFET 80V N-Channel QFET Logic Level

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1039697-FQD17N08LTM FQD17N08LTM FQD17N08LTMTR-ND 278-FQD17N08LTM FQD17N08LTM FQD17N08LTM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD17N08LTM Single FETs, MOSFETs Single FETs, MOSFETs N-Channel 80V 12.9A DPAK MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 80 volts 80 volts
PD 2500 to 40000 milliwatts 2500 milliwatts 40000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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