onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD17N08LTM FQD17N08LTM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039697-FQD17N08LTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 12.9A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 11.5nC @ 5V Max Input Capacitance: 520pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 6.45A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Quantity per package: 2,500
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039697-FQD17N08LTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 12.9A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 11.5nC @ 5V Max Input Capacitance: 520pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 6.45A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD17N08LTM - 1039697-FQD17N08LTM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD17N08LTM
1039697-FQD17N08LTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD17N08LTM 1039697-FQD17N08LTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039697-FQD17N08LTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252, (D-Pak) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 12.9A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 11.5nC @ 5V Max Input Capacitance: 520pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 6.45A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039697-FQD17N08LTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252, (D-Pak)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 12.9A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 11.5nC @ 5V
Max Input Capacitance: 520pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 6.45A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500

Buy Now Datasheet
Singapore
N-Channel 80V 12.9A DPAK MOSFET Transistor
278-FQD17N08LTM
N-Channel 80V 12.9A DPAK MOSFET Transistor 278-FQD17N08LTM
N-Channel MOSFET, 80V, 12.9A, 100mR, Logic Level, DPAK Product overview: FQD17N08LTM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80V, 12.9A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 12.9A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD17N08LTM can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 80V, 12.9A, 100mR, Logic Level, DPAK Product overview: FQD17N08LTM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80V, 12.9A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 12.9A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD17N08LTM can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FQD17N08LTMTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD17N08LTMTR-ND
Single FETs, MOSFETs FQD17N08LTMTR-ND
N-Channel 80V 12.9A (Tc) 2.5W (Ta), 40W (Tc) Surface Mount D-Pak

N-Channel 80V 12.9A (Tc) 2.5W (Ta), 40W (Tc) Surface Mount D-Pak

Buy Now Datasheet
Single FETs, MOSFETs - FQD17N08LTM - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQD17N08LTM
Single FETs, MOSFETs FQD17N08LTM
MOSFET N-CH 80V 12.9A TO252

MOSFET N-CH 80V 12.9A TO252

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 80V N-Channel QFET Logic Level

MOSFET 80V N-Channel QFET Logic Level

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD17N08LTM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD17N08LTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD17N08LTM
MOSFET N-CH 80V 12.9A TO252

MOSFET N-CH 80V 12.9A TO252

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1039697-FQD17N08LTM 278-FQD17N08LTM FQD17N08LTMTR-ND FQD17N08LTM FQD17N08LTM FQD17N08LTM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD17N08LTM N-Channel 80V 12.9A DPAK MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 80 volts 80 volts
PD 2500 to 40000 milliwatts 40000 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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