POWER FIELD-EFFECT TRANSISTOR, 1
MOSFET N-CH 250V 16A DPAK
N-Channel 250V 16A (Tc) 160W (Tc) Surface Mount TO-252AA
N-Channel 250V 16A (Tc) 160W (Tc) Surface Mount TO-252AA
N-Channel 250V 16A (Tc) 160W (Tc) Surface Mount TO-252AA
MOSFETs HIGH VOLTAGE Product overview: FQD16N25CTM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQD16N25CTM can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 126237-FQD16N25CTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 53.5nC @ 10V
Max Input Capacitance: 1080pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 270 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
MOSFET TRANSISTOR, N CHANNEL, 16 A, 250 V, 220 MOHM, 10 V, 4 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 250V 16A DPAK
N CHANNEL MOSFET, 250V, 16A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 16 A, 250 V, 220 mohm, 10 V, 4 V RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Radwell International | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQD16N25CTM | FQD16N25CTMDKR-ND | 2088-FQD16N25CTM | 126237-FQD16N25CTM | 16125640 | FQD16N25CTM | 75M2471 | 87X8792 | FQD16N25CTM |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD16N25CTM | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 250V, 16A, D-Pak; Channel Type Onsemi | Mosfet Transistor, N Channel, 16 A, 250 V, 220 Mohm, 10 V, 4 V Rohs Compliant Onsemi | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 250 volts | 250 volts | |||||||
| IDSS | 16000 milliamps | 16000 milliamps | |||||||
| PD | 160000 milliwatts | 160 milliwatts | 160000 milliwatts |
