onsemi Single FETs, MOSFETs FQD16N15TM

Description
N-Channel 150V 11.8A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA
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Description
N-Channel 150V 11.8A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - FQD16N15TM-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD16N15TM-ND
Single FETs, MOSFETs FQD16N15TM-ND
N-Channel 150V 11.8A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA

N-Channel 150V 11.8A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD16N15TM - 204288-FQD16N15TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD16N15TM
204288-FQD16N15TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD16N15TM 204288-FQD16N15TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204288-FQD16N15TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 11.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 910pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 160 mOhm @ 5.9A, 10V Alternative Parts (Cross-Reference): IRFR13N15DTRPBF; FQD16N15TM_NL; FQD16N15TF; Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204288-FQD16N15TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 11.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 910pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 160 mOhm @ 5.9A, 10V
Alternative Parts (Cross-Reference): IRFR13N15DTRPBF; FQD16N15TM_NL; FQD16N15TF;
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD16N15TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD16N15TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD16N15TM
MOSFET N-CH 150V 11.8A DPAK

MOSFET N-CH 150V 11.8A DPAK

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQD16N15TM-ND 204288-FQD16N15TM FQD16N15TM
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD16N15TM Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 150 volts
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