onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD13N06TM FQD13N06TM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016430-FQD13N06TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 7.5nC @ 10V Max Input Capacitance: 310pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 140 mOhm @ 5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Quantity per package: 2,500
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016430-FQD13N06TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 7.5nC @ 10V Max Input Capacitance: 310pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 140 mOhm @ 5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD13N06TM - 016430-FQD13N06TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD13N06TM
016430-FQD13N06TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD13N06TM 016430-FQD13N06TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016430-FQD13N06TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 7.5nC @ 10V Max Input Capacitance: 310pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 140 mOhm @ 5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016430-FQD13N06TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 7.5nC @ 10V
Max Input Capacitance: 310pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 140 mOhm @ 5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Singapore
N-Channel SMD 60V 10A MOSFET Transistor
278-FQD13N06TM
N-Channel SMD 60V 10A MOSFET Transistor 278-FQD13N06TM
N-Channel MOSFET, 60V, 10A, 140mR, DPAK, Surface Mount Product overview: FQD13N06TM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 60V, 10A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 60V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD13N06TM can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 60V, 10A, 140mR, DPAK, Surface Mount Product overview: FQD13N06TM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 60V, 10A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 60V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD13N06TM can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FQD13N06TMTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD13N06TMTR-ND
Single FETs, MOSFETs FQD13N06TMTR-ND
N-Channel 60V 10A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount TO-252AA

N-Channel 60V 10A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD13N06TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD13N06TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD13N06TM
MOSFET N-CH 60V 10A DPAK

MOSFET N-CH 60V 10A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 016430-FQD13N06TM 278-FQD13N06TM FQD13N06TMTR-ND FQD13N06TM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD13N06TM N-Channel SMD 60V 10A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 60 volts
PD 2500 to 28000 milliwatts 2500 milliwatts
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5 suppliers