MOSFETs 60V N-Channel QFET Logic Level Product overview: FQD13N06LTM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQD13N06LTM can be used for catalog matching and distributor lookup.
POWER FIELD-EFFECT TRANSISTOR, 1
MOSFET N-CH 60V 11A DPAK
N-Channel 60V 11A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount TO-252AA
N-Channel 60V 11A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount TO-252AA
N-Channel 60V 11A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount TO-252AA
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016429-FQD13N06LTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 6.4nC @ 5V
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 115 mOhm @ 5.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
MOSFET N-CH 60V 11A DPAK
MOSFET, N CH, 60V, 11A, TO-252AA-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
MOSFET 60V N-Channel QFET Logic Level
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-FQD13N06LTM | FQD13N06LTM | FQD13N06LTMDKR-ND | 016429-FQD13N06LTM | FQD13N06LTM | 31Y1522 | FQD13N06LTM |
| Product Name | N-Channel 60V MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD13N06LTM | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Ch, 60V, 11A, To-252Aa-3; Channel Type Onsemi | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.0060 kS | ||||||
| PD | 2.5 milliwatts | 2500 milliwatts | 2500 to 28000 milliwatts | ||||
| Package Type | Reel | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); D-Pak | Surface Mount | TO-3 |
