MOSFET N-CH 200V 9A DPAK
POWER FIELD-EFFECT TRANSISTOR, 9
N-Channel 200V 9A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA
N-Channel 200V 9A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA
N-Channel 200V 9A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount TO-252AA
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016428-FQD12N20LTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 21nC @ 5V
Max Input Capacitance: 1080pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 280 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Lighting, Industrial
Quantity per package: 2,500
N CHANNEL MOSFET, 200V, 9A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 9 A, 200 V, 0.22 ohm, 10 V, 2 V RoHS Compliant: Yes
N CHANNEL MOSFET, 200V, 9A, D-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
(PRICE/TC),MOSFET TRANSISTOR, N CHANNEL, 9 A, 200 V, 0.22 OHM, 10 V, 2 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET 200V N-Ch QFET Logic Level
MOSFET N-CH 200V 9A DPAK
| ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | Radwell International | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FQD12N20LTM | FQD12N20LTMCT-ND | 6710942 | 6710942P | 016428-FQD12N20LTM | 06R2503 | 31Y1521 | 16125636 | FQD12N20LTM | FQD12N20LTM |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD12N20LTM | N Channel Mosfet, 200V, 9A, D-Pak; Channel Type Onsemi | Mosfet Transistor, N Channel, 9 A, 200 V, 0.22 Ohm, 10 V, 2 V Rohs Compliant Onsemi | Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 200 volts | 200 volts | ||||||||
| IDSS | 9000 milliamps | 9000 milliamps | ||||||||
| PD | 2500 milliwatts | 2500 to 55000 milliwatts |
