onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD12N20LTF FQD12N20LTF

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039685-FQD12N20LTF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 21nC @ 5V Max Input Capacitance: 1080pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 280 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039685-FQD12N20LTF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 21nC @ 5V Max Input Capacitance: 1080pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 280 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD12N20LTF - 1039685-FQD12N20LTF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD12N20LTF
1039685-FQD12N20LTF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD12N20LTF 1039685-FQD12N20LTF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039685-FQD12N20LTF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 21nC @ 5V Max Input Capacitance: 1080pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 280 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039685-FQD12N20LTF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 21nC @ 5V
Max Input Capacitance: 1080pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 280 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
200V 9A DPAK MOSFET Transistor
278-FQD12N20LTF
200V 9A DPAK MOSFET Transistor 278-FQD12N20LTF
MOSFET N-CH 200V 9A DPAK Product overview: FQD12N20LTF from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 9A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD12N20LTF can be used for catalog matching and distributor lookup.

MOSFET N-CH 200V 9A DPAK Product overview: FQD12N20LTF from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 9A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 9A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD12N20LTF can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD12N20LTF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD12N20LTF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD12N20LTF
MOSFET N-CH 200V 9A DPAK

MOSFET N-CH 200V 9A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1039685-FQD12N20LTF 278-FQD12N20LTF FQD12N20LTF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD12N20LTF 200V 9A DPAK MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 200 volts
PD 2500 to 55000 milliwatts 55000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SA1352E - 855029-2SA1352E - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
 - AUIRF7640S2TR - Rochester Electronics
Specs
Polarity N-Channel
rDS(on) 0.0360 ohms
Package Type MG-WDSON-4
View Details
7 suppliers