MOSFETs TO-252 DPAK P-CH 60V Product overview: FQD11P06TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, TO-252, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQD11P06TM can be used for catalog matching and distributor lookup.
P-Channel 60V 9.4A (Tc) 2.5W (Ta), 38W (Tc) Surface Mount TO-252AA
P-Channel 60V 9.4A (Tc) 2.5W (Ta), 38W (Tc) Surface Mount TO-252AA
P-Channel 60V 9.4A (Tc) 2.5W (Ta), 38W (Tc) Surface Mount TO-252AA
MOSFET P-CH 60V 9.4A DPAK
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016427-FQD11P06TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Family Name: FQD11P06
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 9.4A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 550pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 185 mOhm @ 4.7A, 10V
Alternative Parts (Cross-Reference): SPD08P06PGXT; STD10PF06T4; STD10PF06; SPD08P06PGBTMA1;
Introduction Date: January 01, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
60V 9.4A 185mΩ@4.7A,10V 4V@250uA P Channel TO-252AA MOSFETs ROHS
MOSFET, P-CHANNEL, -60V, -9.4A, TO-252-3; Channel Type:P Channel; Drain Source Voltage Vds:-60V; Continuous Drain Current Id:-9.4A; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-4V; Power Dissipation:2.5W RoHS Compliant: Yes
MOSFET, P-CHANNEL, -60V, -9.4A, TO-252-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.4A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; PowerRoHS Compliant: Yes
MOSFET P-CH 60V 9.4A DPAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-FQD11P06TM | FQD11P06TMCT-ND | FQD11P06TM | 016427-FQD11P06TM | 6710949 | 6710949P | FQD11P06TM | 84Y9964 | 85AC1805 | FQD11P06TM | FQD11P06TM |
| Product Name | 60V TO-252 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD11P06TM | MOSFETs | MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, P-Channel, -60V, -9.4A, To-252-3; Channel Type Onsemi | Mosfet, P-Channel, -60V, -9.4A, To-252-3; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | ||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||||
| Transconductance | 0.0049 kS | ||||||||||
| PD | 2.5 milliwatts | 2500 milliwatts | 2500 to 38000 milliwatts | 2500 milliwatts | 2500 milliwatts | ||||||
| Package Type | Reel | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); D-Pak | TO-252 (DPAK); Dpak (to-252) | TO-252 (DPAK); TO-252 | TO-252 (DPAK) | TO-3 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
