onsemi Single FETs, MOSFETs FQD10N20CTM

Description
N-Channel 200V 7.8A (Tc) 50W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet
Description
N-Channel 200V 7.8A (Tc) 50W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQD10N20CTMTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQD10N20CTMTR-ND
Single FETs, MOSFETs FQD10N20CTMTR-ND
N-Channel 200V 7.8A (Tc) 50W (Tc) Surface Mount TO-252AA

N-Channel 200V 7.8A (Tc) 50W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Singapore
N-Channel 200V 7.8A DPAK MOSFET Transistor
278-FQD10N20CTM
N-Channel 200V 7.8A DPAK MOSFET Transistor 278-FQD10N20CTM
200V N-Channel MOSFET, 7.8A, 360mR, DPAK, Tape & Reel Product overview: FQD10N20CTM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 7.8A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 7.8A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD10N20CTM can be used for catalog matching and distributor lookup.

200V N-Channel MOSFET, 7.8A, 360mR, DPAK, Tape & Reel Product overview: FQD10N20CTM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 7.8A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 7.8A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQD10N20CTM can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FQD10N20CTM - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQD10N20CTM
Single FETs, MOSFETs FQD10N20CTM
MOSFET N-CH 200V 7.8A DPAK

MOSFET N-CH 200V 7.8A DPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD10N20CTM - 016426-FQD10N20CTM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD10N20CTM
016426-FQD10N20CTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD10N20CTM 016426-FQD10N20CTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016426-FQD10N20CTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 7.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 510pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 360 mOhm @ 3.9A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016426-FQD10N20CTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 7.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 510pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 360 mOhm @ 3.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQD10N20CTM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQD10N20CTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQD10N20CTM
MOSFET N-CH 200V 7.8A DPAK

MOSFET N-CH 200V 7.8A DPAK

Supplier's Site
Mosfet, N-Ch, 200V, 7.8A, To-252Aa-3; Channel Type Onsemi - 31Y1520 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 200V, 7.8A, To-252Aa-3; Channel Type Onsemi
31Y1520
Mosfet, N-Ch, 200V, 7.8A, To-252Aa-3; Channel Type Onsemi 31Y1520
MOSFET, N-CH, 200V, 7.8A, TO-252AA-3; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:7.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 200V, 7.8A, TO-252AA-3; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:7.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH/200V/10A/QFET

MOSFET N-CH/200V/10A/QFET

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FQD10N20CTMTR-ND 278-FQD10N20CTM FQD10N20CTM 016426-FQD10N20CTM FQD10N20CTM 31Y1520 FQD10N20CTM
Product Name Single FETs, MOSFETs N-Channel 200V 7.8A DPAK MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQD10N20CTM Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 200V, 7.8A, To-252Aa-3; Channel Type Onsemi MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3
PD 50000 milliwatts 50000 milliwatts 50000 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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