MOSFET P-CH 250V 9.4A D2PAK
P-Channel 250V 9.4A (Tc) 3.13W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263)
P-Channel 250V 9.4A (Tc) 3.13W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263)
P-Channel 250V 9.4A (Tc) 3.13W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039678-FQB9P25TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.13W (Ta), 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 9.4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1180pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 620 mOhm @ 4.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient
MOSFET P-CH 250V 9.4A D2PAK
MOSFET, P-CH, -250V, -9.4A, TO-263-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.4A; Drain Source Voltage Vds:-250V; On Resistance Rds(on):0.48ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-5V; Power RoHS Compliant: Yes
MOSFET, P-CH, -250V, -9.4A, TO-263-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.4A; Drain Source Voltage Vds:-250V; On Resistance Rds(on):0.48ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-5V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQB9P25TM | FQB9P25TMTR-ND | 1039678-FQB9P25TM | FQB9P25TM | FQB9P25TM | 46AC0857 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB9P25TM | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -250V, -9.4A, To-263-3; Transistor Polarity Onsemi |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 250 volts | 250 volts | ||||
| IDSS | 9400 milliamps | -9400 milliamps | ||||
| PD | 3130 milliwatts | 3130 to 120000 milliwatts |
