onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB9P25TM FQB9P25TM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039678-FQB9P25TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.13W (Ta), 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 9.4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1180pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 620 mOhm @ 4.7A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB9P25TM - 1039678-FQB9P25TM - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQB9P25TMTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FQB9P25TMCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FQB9P25TMDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - FQB9P25TM - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB9P25TM - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, P-Ch, -250V, -9.4A, To-263-3; Transistor Polarity Onsemi - 46AC0857 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, P-Ch, -250V, -9.4A, To-263-3; Transistor Polarity Onsemi - 85AC1804 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039678-FQB9P25TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.13W (Ta), 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 9.4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1180pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 620 mOhm @ 4.7A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB9P25TM - 1039678-FQB9P25TM - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB9P25TM
1039678-FQB9P25TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB9P25TM 1039678-FQB9P25TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039678-FQB9P25TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.13W (Ta), 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 9.4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1180pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 620 mOhm @ 4.7A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039678-FQB9P25TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.13W (Ta), 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 9.4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1180pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 620 mOhm @ 4.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - FQB9P25TMTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB9P25TMTR-ND
Single FETs, MOSFETs FQB9P25TMTR-ND
P-Channel 250V 9.4A (Tc) 3.13W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263)

P-Channel 250V 9.4A (Tc) 3.13W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FQB9P25TMCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB9P25TMCT-ND
Single FETs, MOSFETs FQB9P25TMCT-ND
P-Channel 250V 9.4A (Tc) 3.13W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263)

P-Channel 250V 9.4A (Tc) 3.13W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FQB9P25TMDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB9P25TMDKR-ND
Single FETs, MOSFETs FQB9P25TMDKR-ND
P-Channel 250V 9.4A (Tc) 3.13W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263)

P-Channel 250V 9.4A (Tc) 3.13W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FQB9P25TM - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQB9P25TM
Single FETs, MOSFETs FQB9P25TM
MOSFET P-CH 250V 9.4A D2PAK

MOSFET P-CH 250V 9.4A D2PAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB9P25TM - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQB9P25TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQB9P25TM
MOSFET P-CH 250V 9.4A D2PAK

MOSFET P-CH 250V 9.4A D2PAK

Supplier's Site
Mosfet, P-Ch, -250V, -9.4A, To-263-3; Transistor Polarity Onsemi - 46AC0857 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -250V, -9.4A, To-263-3; Transistor Polarity Onsemi
46AC0857
Mosfet, P-Ch, -250V, -9.4A, To-263-3; Transistor Polarity Onsemi 46AC0857
MOSFET, P-CH, -250V, -9.4A, TO-263-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.4A; Drain Source Voltage Vds:-250V; On Resistance Rds(on):0.48ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-5V; Power RoHS Compliant: Yes

MOSFET, P-CH, -250V, -9.4A, TO-263-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.4A; Drain Source Voltage Vds:-250V; On Resistance Rds(on):0.48ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, P-Ch, -250V, -9.4A, To-263-3; Transistor Polarity Onsemi - 85AC1804 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -250V, -9.4A, To-263-3; Transistor Polarity Onsemi
85AC1804
Mosfet, P-Ch, -250V, -9.4A, To-263-3; Transistor Polarity Onsemi 85AC1804
MOSFET, P-CH, -250V, -9.4A, TO-263-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.4A; Drain Source Voltage Vds:-250V; On Resistance Rds(on):0.48ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-5V; Power RoHS Compliant: Yes

MOSFET, P-CH, -250V, -9.4A, TO-263-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.4A; Drain Source Voltage Vds:-250V; On Resistance Rds(on):0.48ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQB9P25TM
MOSFET FQB9P25TM
MOSFET 250V P-Channel QFET

MOSFET 250V P-Channel QFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1039678-FQB9P25TM FQB9P25TMTR-ND FQB9P25TM FQB9P25TM 46AC0857 FQB9P25TM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB9P25TM Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P-Ch, -250V, -9.4A, To-263-3; Transistor Polarity Onsemi MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 250 volts 250 volts
PD 3130 to 120000 milliwatts 3130 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; SOT3; D2PAK (TO-263AB) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3; TO-263
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