onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB9N25CTM FQB9N25CTM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204287-FQB9N25CTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 8.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 710pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 430 mOhm @ 4.4A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB9N25CTM - 204287-FQB9N25CTM - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB9N25CTM - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204287-FQB9N25CTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 8.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 710pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 430 mOhm @ 4.4A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB9N25CTM - 204287-FQB9N25CTM - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB9N25CTM
204287-FQB9N25CTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB9N25CTM 204287-FQB9N25CTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204287-FQB9N25CTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 8.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 710pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 430 mOhm @ 4.4A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204287-FQB9N25CTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.13W (Ta), 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 8.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 710pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 430 mOhm @ 4.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB9N25CTM - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQB9N25CTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQB9N25CTM
MOSFET N-CH 250V 8.8A D2PAK

MOSFET N-CH 250V 8.8A D2PAK

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 204287-FQB9N25CTM FQB9N25CTM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB9N25CTM Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 250 volts
PD 3130 to 74000 milliwatts
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