onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FQB9N08TM

Description
Win Source Part Number: 1059662-FQB9N08TM Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: QFET® Package: Tape & Reel (TR) Standard Package: 800 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 4.65A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.75W (Ta), 40W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): FQB7N10TM; FQB7P06TM; SPB10N10L G; FQB17N08TM; SFW9530TM; IPB45N06S409ATMA1; ECCN: EAR99 Fake Threat In the Open Market: 61 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Base Product Number: FQB9 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1059662-FQB9N08TM - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB9N08TM - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Win Source Part Number: 1059662-FQB9N08TM Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: QFET® Package: Tape & Reel (TR) Standard Package: 800 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 4.65A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.75W (Ta), 40W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): FQB7N10TM; FQB7P06TM; SPB10N10L G; FQB17N08TM; SFW9530TM; IPB45N06S409ATMA1; ECCN: EAR99 Fake Threat In the Open Market: 61 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Base Product Number: FQB9 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1059662-FQB9N08TM - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1059662-FQB9N08TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1059662-FQB9N08TM
Win Source Part Number: 1059662-FQB9N08TM Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: QFET® Package: Tape & Reel (TR) Standard Package: 800 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 4.65A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.75W (Ta), 40W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): FQB7N10TM; FQB7P06TM; SPB10N10L G; FQB17N08TM; SFW9530TM; IPB45N06S409ATMA1; ECCN: EAR99 Fake Threat In the Open Market: 61 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Base Product Number: FQB9 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1059662-FQB9N08TM
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: QFET®
Package: Tape & Reel (TR)
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.65A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 40W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): FQB7N10TM; FQB7P06TM; SPB10N10L G; FQB17N08TM; SFW9530TM; IPB45N06S409ATMA1;
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Base Product Number: FQB9
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB9N08TM - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQB9N08TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQB9N08TM
MOSFET N-CH 80V 9.3A D2PAK

MOSFET N-CH 80V 9.3A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1059662-FQB9N08TM FQB9N08TM
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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