onsemi Single FETs, MOSFETs FQB8N60CTM

Description
N-Channel 600V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Surface Mount D²PAK (TO-263)
  • Single FETs, MOSFETs - FQB8N60CTMFSTR-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB8N60CTM - 067389-FQB8N60CTM - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB8N60CTM - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET 600V N-Channel Adv Q-FET C-Series - 598-FQB8N60CTM - Utmel Electronic Limited
    Utmel Electronic Limited
  • Mosfet, N-Ch, 600V, 7.5A, To-263; Channel Type Onsemi - 60J0803 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 600V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQB8N60CTMFSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB8N60CTMFSTR-ND
Single FETs, MOSFETs FQB8N60CTMFSTR-ND
N-Channel 600V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB8N60CTM - 067389-FQB8N60CTM - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB8N60CTM
067389-FQB8N60CTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB8N60CTM 067389-FQB8N60CTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067389-FQB8N60CTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 147W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 1255pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.75A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067389-FQB8N60CTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 1255pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB8N60CTM - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQB8N60CTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQB8N60CTM
MOSFET N-CH 600V 7.5A D2PAK

MOSFET N-CH 600V 7.5A D2PAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQB8N60CTM
MOSFET FQB8N60CTM
MOSFET 600V N-Channel Adv Q-FET C-Series

MOSFET 600V N-Channel Adv Q-FET C-Series

Buy Now Datasheet
MOSFET 600V N-Channel Adv Q-FET C-Series - 598-FQB8N60CTM - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET 600V N-Channel Adv Q-FET C-Series
598-FQB8N60CTM
MOSFET 600V N-Channel Adv Q-FET C-Series 598-FQB8N60CTM
MOSFET 600V N-Channel Adv Q-FET C-Series

MOSFET 600V N-Channel Adv Q-FET C-Series

Supplier's Site
Mosfet, N-Ch, 600V, 7.5A, To-263; Channel Type Onsemi - 60J0803 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 7.5A, To-263; Channel Type Onsemi
60J0803
Mosfet, N-Ch, 600V, 7.5A, To-263; Channel Type Onsemi 60J0803
MOSFET, N-CH, 600V, 7.5A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 600V, 7.5A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FQB8N60CTMFSTR-ND 067389-FQB8N60CTM FQB8N60CTM FQB8N60CTM 598-FQB8N60CTM 60J0803
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB8N60CTM Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET MOSFET 600V N-Channel Adv Q-FET C-Series Mosfet, N-Ch, 600V, 7.5A, To-263; Channel Type Onsemi
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK (TO-263AB) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3; TO-263
V(BR)DSS 600 volts 600 volts
PD 3130 to 147000 milliwatts 3130 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data