onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB8N60CTM FQB8N60CTM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067389-FQB8N60CTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 147W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 1255pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.75A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Quantity per package: 800
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB8N60CTM - 067389-FQB8N60CTM - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQB8N60CTMFSTR-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 600V, 7.5A, To-263; Channel Type Onsemi - 60J0803 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB8N60CTM - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET 600V N-Channel Adv Q-FET C-Series - 598-FQB8N60CTM - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067389-FQB8N60CTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 147W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 1255pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.75A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB8N60CTM - 067389-FQB8N60CTM - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB8N60CTM
067389-FQB8N60CTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB8N60CTM 067389-FQB8N60CTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067389-FQB8N60CTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 147W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 1255pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.75A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067389-FQB8N60CTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 1255pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 600V 7.5A MOSFET Transistor
278-FQB8N60CTM
N-Channel 600V 7.5A MOSFET Transistor 278-FQB8N60CTM
600V N-Channel Power MOSFET, 7.5A, 1.2Ω, D2PAK Product overview: FQB8N60CTM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 7.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 7.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQB8N60CTM can be used for catalog matching and distributor lookup.

600V N-Channel Power MOSFET, 7.5A, 1.2Ω, D2PAK Product overview: FQB8N60CTM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 7.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 7.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQB8N60CTM can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FQB8N60CTMFSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB8N60CTMFSTR-ND
Single FETs, MOSFETs FQB8N60CTMFSTR-ND
N-Channel 600V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Mosfet, N-Ch, 600V, 7.5A, To-263; Channel Type Onsemi - 60J0803 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 7.5A, To-263; Channel Type Onsemi
60J0803
Mosfet, N-Ch, 600V, 7.5A, To-263; Channel Type Onsemi 60J0803
MOSFET, N-CH, 600V, 7.5A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 600V, 7.5A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQB8N60CTM
MOSFET FQB8N60CTM
MOSFET 600V N-Channel Adv Q-FET C-Series

MOSFET 600V N-Channel Adv Q-FET C-Series

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB8N60CTM - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQB8N60CTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQB8N60CTM
MOSFET N-CH 600V 7.5A D2PAK

MOSFET N-CH 600V 7.5A D2PAK

Supplier's Site
MOSFET 600V N-Channel Adv Q-FET C-Series - 598-FQB8N60CTM - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET 600V N-Channel Adv Q-FET C-Series
598-FQB8N60CTM
MOSFET 600V N-Channel Adv Q-FET C-Series 598-FQB8N60CTM
MOSFET 600V N-Channel Adv Q-FET C-Series

MOSFET 600V N-Channel Adv Q-FET C-Series

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 067389-FQB8N60CTM 278-FQB8N60CTM FQB8N60CTMFSTR-ND 60J0803 FQB8N60CTM FQB8N60CTM 598-FQB8N60CTM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB8N60CTM N-Channel 600V 7.5A MOSFET Transistor Single FETs, MOSFETs Mosfet, N-Ch, 600V, 7.5A, To-263; Channel Type Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET 600V N-Channel Adv Q-FET C-Series
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 3130 to 147000 milliwatts 147000 milliwatts 3130 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; SOT3; D2PAK (TO-263AB) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3; TO-263 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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