onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB7N65CTM FQB7N65CTM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 129202-FQB7N65CTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 173W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 1245pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 129202-FQB7N65CTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 173W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 1245pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB7N65CTM - 129202-FQB7N65CTM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB7N65CTM
129202-FQB7N65CTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB7N65CTM 129202-FQB7N65CTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 129202-FQB7N65CTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 173W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 1245pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.4 Ohm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 129202-FQB7N65CTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 173W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 1245pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - FQB7N65CTMTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB7N65CTMTR-ND
Single FETs, MOSFETs FQB7N65CTMTR-ND
N-Channel 650V 7A (Tc) 173W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 650V 7A (Tc) 173W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Singapore
650V 7A MOSFET Transistor
278-FQB7N65CTM
650V 7A MOSFET Transistor 278-FQB7N65CTM
MOSFET N-CH 650V 7A D2PAK Product overview: FQB7N65CTM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQB7N65CTM can be used for catalog matching and distributor lookup.

MOSFET N-CH 650V 7A D2PAK Product overview: FQB7N65CTM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQB7N65CTM can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB7N65CTM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQB7N65CTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQB7N65CTM
MOSFET N-CH 650V 7A D2PAK

MOSFET N-CH 650V 7A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 129202-FQB7N65CTM FQB7N65CTMTR-ND 278-FQB7N65CTM FQB7N65CTM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB7N65CTM Single FETs, MOSFETs 650V 7A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 650 volts
PD 173000 milliwatts 173000 milliwatts
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