onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB7N20LTM FQB7N20LTM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039667-FQB7N20LTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 63W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 6.5A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 9nC @ 5V Max Input Capacitance: 500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 750 mOhm @ 3.25A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039667-FQB7N20LTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 63W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 6.5A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 9nC @ 5V Max Input Capacitance: 500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 750 mOhm @ 3.25A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB7N20LTM - 1039667-FQB7N20LTM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB7N20LTM
1039667-FQB7N20LTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB7N20LTM 1039667-FQB7N20LTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039667-FQB7N20LTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 63W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 6.5A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 9nC @ 5V Max Input Capacitance: 500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 750 mOhm @ 3.25A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039667-FQB7N20LTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.13W (Ta), 63W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 6.5A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 9nC @ 5V
Max Input Capacitance: 500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 750 mOhm @ 3.25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - FQB7N20LTM-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB7N20LTM-ND
Single FETs, MOSFETs FQB7N20LTM-ND
N-Channel 200V 6.5A (Tc) 3.13W (Ta), 63W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 200V 6.5A (Tc) 3.13W (Ta), 63W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB7N20LTM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQB7N20LTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQB7N20LTM
MOSFET N-CH 200V 6.5A D2PAK

MOSFET N-CH 200V 6.5A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1039667-FQB7N20LTM FQB7N20LTM-ND FQB7N20LTM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB7N20LTM Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 200 volts
PD 3130 to 63000 milliwatts
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