N-Channel 900V 5.8A (Tc) 3.13W (Ta), 167W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 774724-FQB6N90TM_AM0
Series: QFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Part Status: Obsolete(EOL)
Family Name: FQB6N90
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: D2PAK (TO-263AB)
Channel Type Type: N
Drain Source Voltage: 900V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 52nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1880pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 3.13W (Ta), 167W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.9 Ohm @ 2.9A, 10V
Alternative Parts (Cross-Reference): STB6NK90Z; STB6NK90ZT4; STB6NC90Z; STB6NC90ZT4;
Introduction Date: December 26, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
MOSFET N-CH 900V 5.8A D2PAK
MOSFET N-CH 900V 5.8A D2PAK
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQB6N90TM_AM002-ND | 774724-FQB6N90TM_AM002 | FQB6N90TM_AM002 | 598-FQB6N90TM_AM002 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB6N90TM_AM002 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 900V 5.8A D2PAK |
| Polarity | N-Channel |
