onsemi Single FETs, MOSFETs FQB6N50TM

Description
N-Channel 500V 5.5A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
N-Channel 500V 5.5A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQB6N50TM-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB6N50TM-ND
Single FETs, MOSFETs FQB6N50TM-ND
N-Channel 500V 5.5A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 500V 5.5A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Singapore
500V 5.5A MOSFET Transistor
278-FQB6N50TM
500V 5.5A MOSFET Transistor 278-FQB6N50TM
MOSFET N-CH 500V 5.5A D2PAK Product overview: FQB6N50TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 5.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 5.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQB6N50TM can be used for catalog matching and distributor lookup.

MOSFET N-CH 500V 5.5A D2PAK Product overview: FQB6N50TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 5.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 5.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQB6N50TM can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB6N50TM - 1175266-FQB6N50TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB6N50TM
1175266-FQB6N50TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB6N50TM 1175266-FQB6N50TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1175266-FQB6N50TM Series: QFET Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Part Status: Obsolete(EOL) Family Name: FQB6N50 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: D2PAK (TO-263AB) Channel Type Type: N Drain Source Voltage: 500V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 790pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 3.13W (Ta), 130W (Tc) Rds On (Maximum) @ Id, Vgs: 1.3 Ohm @ 2.8A, 10V Alternative Parts (Cross-Reference): SiHF830ASTL; IRF830ASTRRPBF; IRF830ASPBF; Introduction Date: May 16, 2000 ECCN: EAR99 Estimated EOL Date: Obsolete Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1175266-FQB6N50TM
Series: QFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Part Status: Obsolete(EOL)
Family Name: FQB6N50
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: D2PAK (TO-263AB)
Channel Type Type: N
Drain Source Voltage: 500V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 790pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 3.13W (Ta), 130W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.3 Ohm @ 2.8A, 10V
Alternative Parts (Cross-Reference): SiHF830ASTL; IRF830ASTRRPBF; IRF830ASPBF;
Introduction Date: May 16, 2000
ECCN: EAR99
Estimated EOL Date: Obsolete
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFET N-CH 500V 5.5A D2PAK - 598-FQB6N50TM - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 500V 5.5A D2PAK
598-FQB6N50TM
MOSFET N-CH 500V 5.5A D2PAK 598-FQB6N50TM
MOSFET N-CH 500V 5.5A D2PAK

MOSFET N-CH 500V 5.5A D2PAK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB6N50TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQB6N50TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQB6N50TM
MOSFET N-CH 500V 5.5A D2PAK

MOSFET N-CH 500V 5.5A D2PAK

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQB6N50TM-ND 278-FQB6N50TM 1175266-FQB6N50TM 598-FQB6N50TM FQB6N50TM
Product Name Single FETs, MOSFETs 500V 5.5A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB6N50TM MOSFET N-CH 500V 5.5A D2PAK Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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