MOSFET N-CH 900V 5.4A D2PAK
MOSFETs 900V N-Channel QFET Product overview: FQB5N90TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 900V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQB5N90TM can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 138628-FQB5N90TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.13W (Ta), 158W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 5.4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1550pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.3 Ohm @ 2.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Quantity per package: 800
N-Channel 900V 5.4A (Tc) 3.13W (Ta), 158W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 900V 5.4A (Tc) 3.13W (Ta), 158W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 900V 5.4A (Tc) 3.13W (Ta), 158W (Tc) Surface Mount D²PAK (TO-263)
ON Semiconductor, FQB5N90TM
MOSFET, N CHANNEL, 900V, 1.8OHM, 5.4A, TO-263-3; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:5.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:158W RoHS Compliant: Yes
MOSFET N-CH 900V 5.4A D2PAK
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQB5N90TM | 2088-FQB5N90TM | 138628-FQB5N90TM | FQB5N90TMTR-ND | 1867897P | 1867398 | 84W8878 | FQB5N90TM | FQB5N90TM |
| Product Name | Single FETs, MOSFETs | N-Channel 900V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB5N90TM | Single FETs, MOSFETs | Bipolar Transistors | Bipolar Transistors | Mosfet, N Channel, 900V, 1.8Ohm, 5.4A, To-263-3; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 900 volts | 900 volts | |||||||
| IDSS | 5400 milliamps | 5400 milliamps | |||||||
| PD | 3130 milliwatts | 3.13 milliwatts | 3130 to 158000 milliwatts | 158000 milliwatts |
