onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB5N60TM FQB5N60TM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774722-FQB5N60TM Series: QFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Part Status: Obsolete(EOL) Family Name: FQB5N60 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: D2PAK (TO-263AB) Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 730pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 3.13W (Ta), 120W (Tc) Rds On (Maximum) @ Id, Vgs: 2 Ohm @ 2.5A, 10V Alternative Parts (Cross-Reference): STB2N62K3; STB3NB60; STB3N62K3; STB4NK60Z; Introduction Date: May 15, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774722-FQB5N60TM Series: QFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Part Status: Obsolete(EOL) Family Name: FQB5N60 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: D2PAK (TO-263AB) Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 730pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 3.13W (Ta), 120W (Tc) Rds On (Maximum) @ Id, Vgs: 2 Ohm @ 2.5A, 10V Alternative Parts (Cross-Reference): STB2N62K3; STB3NB60; STB3N62K3; STB4NK60Z; Introduction Date: May 15, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB5N60TM - 774722-FQB5N60TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB5N60TM
774722-FQB5N60TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB5N60TM 774722-FQB5N60TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774722-FQB5N60TM Series: QFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Part Status: Obsolete(EOL) Family Name: FQB5N60 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: D2PAK (TO-263AB) Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 730pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 3.13W (Ta), 120W (Tc) Rds On (Maximum) @ Id, Vgs: 2 Ohm @ 2.5A, 10V Alternative Parts (Cross-Reference): STB2N62K3; STB3NB60; STB3N62K3; STB4NK60Z; Introduction Date: May 15, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 774722-FQB5N60TM
Series: QFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Part Status: Obsolete(EOL)
Family Name: FQB5N60
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: D2PAK (TO-263AB)
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 730pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 3.13W (Ta), 120W (Tc)
Rds On (Maximum) @ Id, Vgs: 2 Ohm @ 2.5A, 10V
Alternative Parts (Cross-Reference): STB2N62K3; STB3NB60; STB3N62K3; STB4NK60Z;
Introduction Date: May 15, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB5N60TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQB5N60TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQB5N60TM
MOSFET N-CH 600V 5A D2PAK

MOSFET N-CH 600V 5A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 774722-FQB5N60TM FQB5N60TM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB5N60TM Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 3130 to 120000 milliwatts
Unlock Full Specs
to access all available technical data