Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 140232-FQB55N10TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Family Name: FQB55N10
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 55A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 98nC @ 10V
Max Input Capacitance: 2730pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 26 mOhm @ 27.5A, 10V
Alternative Parts (Cross-Reference): SUM40N10-30; SUM40N10-30-E3; 2SK3588-01S;
Introduction Date: January 01, 2000
ECCN: EAR99
Country of Origin: China, Malaysia, Republic of Korea
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient
Quantity per package: 800
N-Channel 100V 55A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 100V 55A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 100V 55A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D²PAK (TO-263)
MOSFETs 100V N-Channel QFET Product overview: FQB55N10TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQB55N10TM can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 55A D2PAK
N CHANNEL MOSFET, 100V, 55mA, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:55mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET, N-CH, 100V, 55A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
N CHANNEL MOSFET, 100V, 55mA; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:55mA; On Resistance Rds(on):0.021ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 140232-FQB55N10TM | FQB55N10TMTR-ND | 6710914 | 6710914P | 2088-FQB55N10TM | FQB55N10TM | 34C0409 | 46AC0856 | 15R4035 | FQB55N10TM |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB55N10TM | Single FETs, MOSFETs | MOSFETs | MOSFETs | N-Channel 100V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 100V, 55Ma, Full Reel; Channel Type Onsemi | Mosfet, N-Ch, 100V, 55A, To-263-3; Transistor Polarity Onsemi | N Channel Mosfet, 100V, 55Ma; Transistor Polarity Onsemi | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 100 volts | |||||||||
| PD | 3750 to 155000 milliwatts | 3.75 milliwatts | ||||||||
| TJ | -55 to 175 C (-67 to 347 F) | |||||||||
| Package Type | TO-263; SOT3; D2PAK (TO-263AB) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; D2pak (to-263) | TO-263; TO-263 | Reel | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 | TO-3; TO-263 | TO-3 |
