onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB50N06TM FQB50N06TM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039644-FQB50N06TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 41nC @ 10V Max Input Capacitance: 1540pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 22 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Quantity per package: 800
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039644-FQB50N06TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 41nC @ 10V Max Input Capacitance: 1540pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 22 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB50N06TM - 1039644-FQB50N06TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB50N06TM
1039644-FQB50N06TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB50N06TM 1039644-FQB50N06TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039644-FQB50N06TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 41nC @ 10V Max Input Capacitance: 1540pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 22 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039644-FQB50N06TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 1540pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 22 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FQB50N06TMFSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB50N06TMFSTR-ND
Single FETs, MOSFETs FQB50N06TMFSTR-ND
N-Channel 60V 50A (Tc) 3.75W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 60V 50A (Tc) 3.75W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FQB50N06TM - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQB50N06TM
Single FETs, MOSFETs FQB50N06TM
MOSFET N-CH 60V 50A D2PAK

MOSFET N-CH 60V 50A D2PAK

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 60V N-Channel QFET

MOSFET 60V N-Channel QFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB50N06TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQB50N06TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQB50N06TM
MOSFET N-CH 60V 50A D2PAK

MOSFET N-CH 60V 50A D2PAK

Supplier's Site
Mosfet, N-Ch, 60V, 50A, To-263; Channel Type Onsemi - 82C3974 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 50A, To-263; Channel Type Onsemi
82C3974
Mosfet, N-Ch, 60V, 50A, To-263; Channel Type Onsemi 82C3974
MOSFET, N-CH, 60V, 50A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Qualification:-RoHS Compliant: Yes

MOSFET, N-CH, 60V, 50A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Qualification:-RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET 60V N-Channel QFET - 598-FQB50N06TM - Utmel Electronic Limited
Hong Kong, China
MOSFET 60V N-Channel QFET
598-FQB50N06TM
MOSFET 60V N-Channel QFET 598-FQB50N06TM
MOSFET 60V N-Channel QFET

MOSFET 60V N-Channel QFET

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1039644-FQB50N06TM FQB50N06TMFSTR-ND FQB50N06TM FQB50N06TM FQB50N06TM 82C3974 598-FQB50N06TM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB50N06TM Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 60V, 50A, To-263; Channel Type Onsemi MOSFET 60V N-Channel QFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts 60 volts 60 volts
PD 3750 to 120000 milliwatts 3750 milliwatts 3750 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3; D2PAK (TO-263AB) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3; TO-263
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