onsemi Single FETs, MOSFETs FQB50N06TM

Description
MOSFET N-CH 60V 50A D2PAK
  • Single FETs, MOSFETs - FQB50N06TM - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB50N06TM - 1039644-FQB50N06TM - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQB50N06TMFSTR-ND - DigiKey
    DigiKey
  • MOSFET 60V N-Channel QFET - 598-FQB50N06TM - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB50N06TM - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 60V, 50A, To-263; Channel Type Onsemi - 82C3974 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
MOSFET N-CH 60V 50A D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQB50N06TM - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQB50N06TM
Single FETs, MOSFETs FQB50N06TM
MOSFET N-CH 60V 50A D2PAK

MOSFET N-CH 60V 50A D2PAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB50N06TM - 1039644-FQB50N06TM - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB50N06TM
1039644-FQB50N06TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB50N06TM 1039644-FQB50N06TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039644-FQB50N06TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 41nC @ 10V Max Input Capacitance: 1540pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 22 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039644-FQB50N06TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 1540pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 22 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FQB50N06TMFSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB50N06TMFSTR-ND
Single FETs, MOSFETs FQB50N06TMFSTR-ND
N-Channel 60V 50A (Tc) 3.75W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 60V 50A (Tc) 3.75W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
MOSFET 60V N-Channel QFET - 598-FQB50N06TM - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET 60V N-Channel QFET
598-FQB50N06TM
MOSFET 60V N-Channel QFET 598-FQB50N06TM
MOSFET 60V N-Channel QFET

MOSFET 60V N-Channel QFET

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB50N06TM - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQB50N06TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQB50N06TM
MOSFET N-CH 60V 50A D2PAK

MOSFET N-CH 60V 50A D2PAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQB50N06TM
MOSFET FQB50N06TM
MOSFET 60V N-Channel QFET

MOSFET 60V N-Channel QFET

Buy Now Datasheet
Mosfet, N-Ch, 60V, 50A, To-263; Channel Type Onsemi - 82C3974 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 50A, To-263; Channel Type Onsemi
82C3974
Mosfet, N-Ch, 60V, 50A, To-263; Channel Type Onsemi 82C3974
MOSFET, N-CH, 60V, 50A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Qualification:-RoHS Compliant: Yes

MOSFET, N-CH, 60V, 50A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Qualification:-RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FQB50N06TM 1039644-FQB50N06TM FQB50N06TMFSTR-ND 598-FQB50N06TM FQB50N06TM FQB50N06TM 82C3974
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB50N06TM Single FETs, MOSFETs MOSFET 60V N-Channel QFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 60V, 50A, To-263; Channel Type Onsemi
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 60 volts 60 volts 60 volts
IDSS 50000 milliamps 50000 milliamps
PD 3750 milliwatts 3750 to 120000 milliwatts 3750 milliwatts
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