Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039644-FQB50N06TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 1540pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 22 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Quantity per package: 800
N-Channel 60V 50A (Tc) 3.75W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 60V 50A D2PAK
MOSFET, N-CH, 60V, 50A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Qualification:-RoHS Compliant: Yes
MOSFET 60V N-Channel QFET
MOSFET N-CH 60V 50A D2PAK
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1039644-FQB50N06TM | FQB50N06TMFSTR-ND | FQB50N06TM | 82C3974 | 598-FQB50N06TM | FQB50N06TM | FQB50N06TM |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB50N06TM | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, 50A, To-263; Channel Type Onsemi | MOSFET 60V N-Channel QFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||
| PD | 3750 to 120000 milliwatts | 3750 milliwatts | 3750 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | TO-263; SOT3; D2PAK (TO-263AB) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3; TO-263 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
