onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB50N06LTM FQB50N06LTM

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067385-FQB50N06LTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 121W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 52.4A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 32nC @ 5V
Max Input Capacitance: 1630pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 21 mOhm @ 26.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Quantity per package: 800

N-Channel MOSFET, 60V, 52.4A, 21mR, D2PAK, Logic Level Product overview: FQB50N06LTM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 52.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 52.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQB50N06LTM can be used for catalog matching and distributor lookup.

N-Channel 60V 52.4A (Tc) 3.75W (Ta), 121W (Tc) Surface Mount D²PAK (TO-263)

MOSFET N-CH 60V 52.4A D2PAK