onsemi Single FETs, MOSFETs FQB50N06LTM

Description
MOSFET N-CH 60V 52.4A D2PAK
Request a Quote Datasheet
Description
MOSFET N-CH 60V 52.4A D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQB50N06LTM - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQB50N06LTM
Single FETs, MOSFETs FQB50N06LTM
MOSFET N-CH 60V 52.4A D2PAK

MOSFET N-CH 60V 52.4A D2PAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB50N06LTM - 067385-FQB50N06LTM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB50N06LTM
067385-FQB50N06LTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB50N06LTM 067385-FQB50N06LTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067385-FQB50N06LTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 121W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 52.4A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 32nC @ 5V Max Input Capacitance: 1630pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 21 mOhm @ 26.2A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067385-FQB50N06LTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 121W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 52.4A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 32nC @ 5V
Max Input Capacitance: 1630pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 21 mOhm @ 26.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
Singapore
N-Channel 60V 52.4A MOSFET Transistor
278-FQB50N06LTM
N-Channel 60V 52.4A MOSFET Transistor 278-FQB50N06LTM
N-Channel MOSFET, 60V, 52.4A, 21mR, D2PAK, Logic Level Product overview: FQB50N06LTM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 52.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 52.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQB50N06LTM can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 60V, 52.4A, 21mR, D2PAK, Logic Level Product overview: FQB50N06LTM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 52.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 52.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQB50N06LTM can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FQB50N06LTMFSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB50N06LTMFSTR-ND
Single FETs, MOSFETs FQB50N06LTMFSTR-ND
N-Channel 60V 52.4A (Tc) 3.75W (Ta), 121W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 60V 52.4A (Tc) 3.75W (Ta), 121W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 60V N-Channel QFET Logic Level

MOSFET 60V N-Channel QFET Logic Level

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB50N06LTM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQB50N06LTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQB50N06LTM
MOSFET N-CH 60V 52.4A D2PAK

MOSFET N-CH 60V 52.4A D2PAK

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQB50N06LTM 067385-FQB50N06LTM 278-FQB50N06LTM FQB50N06LTMFSTR-ND FQB50N06LTM FQB50N06LTM
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB50N06LTM N-Channel 60V 52.4A MOSFET Transistor Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts
IDSS 52400 milliamps
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