onsemi Single FETs, MOSFETs FQB4P25TM

Description
P-Channel 250V 4A (Tc) 3.13W (Ta), 75W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
P-Channel 250V 4A (Tc) 3.13W (Ta), 75W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - FQB4P25TM-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB4P25TM-ND
Single FETs, MOSFETs FQB4P25TM-ND
P-Channel 250V 4A (Tc) 3.13W (Ta), 75W (Tc) Surface Mount D²PAK (TO-263)

P-Channel 250V 4A (Tc) 3.13W (Ta), 75W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB4P25TM - 040336-FQB4P25TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB4P25TM
040336-FQB4P25TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB4P25TM 040336-FQB4P25TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040336-FQB4P25TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.13W (Ta), 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 420pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.1 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040336-FQB4P25TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.13W (Ta), 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 420pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.1 Ohm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB4P25TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQB4P25TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQB4P25TM
MOSFET P-CH 250V 4A D2PAK

MOSFET P-CH 250V 4A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQB4P25TM-ND 040336-FQB4P25TM FQB4P25TM
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB4P25TM Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK (TO-263AB) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 250 volts
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