onsemi Single FETs, MOSFETs FQB4P25TM

Description
P-Channel 250V 4A (Tc) 3.13W (Ta), 75W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
P-Channel 250V 4A (Tc) 3.13W (Ta), 75W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQB4P25TM-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB4P25TM-ND
Single FETs, MOSFETs FQB4P25TM-ND
P-Channel 250V 4A (Tc) 3.13W (Ta), 75W (Tc) Surface Mount D²PAK (TO-263)

P-Channel 250V 4A (Tc) 3.13W (Ta), 75W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Singapore
SMD 250V 4A MOSFET Transistor
278-FQB4P25TM
SMD 250V 4A MOSFET Transistor 278-FQB4P25TM
P-CH MOSFET 250V 4A TO-263 Surface Mount Product overview: FQB4P25TM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 250V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 250V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQB4P25TM can be used for catalog matching and distributor lookup.

P-CH MOSFET 250V 4A TO-263 Surface Mount Product overview: FQB4P25TM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 250V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 250V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQB4P25TM can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB4P25TM - 040336-FQB4P25TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB4P25TM
040336-FQB4P25TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB4P25TM 040336-FQB4P25TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040336-FQB4P25TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.13W (Ta), 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 420pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.1 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040336-FQB4P25TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.13W (Ta), 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 420pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.1 Ohm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB4P25TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQB4P25TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQB4P25TM
MOSFET P-CH 250V 4A D2PAK

MOSFET P-CH 250V 4A D2PAK

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQB4P25TM-ND 278-FQB4P25TM 040336-FQB4P25TM FQB4P25TM
Product Name Single FETs, MOSFETs SMD 250V 4A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB4P25TM Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel P-Channel; P-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK (TO-263AB) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PD 75000 milliwatts 3130 to 75000 milliwatts
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