onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB4P25 FQB4P25

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067384-FQB4P25 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.13W (Ta), 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 420pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.1 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067384-FQB4P25 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.13W (Ta), 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 420pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.1 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited
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Suppliers

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Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB4P25 - 067384-FQB4P25 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB4P25
067384-FQB4P25
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB4P25 067384-FQB4P25
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067384-FQB4P25 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.13W (Ta), 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 420pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.1 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067384-FQB4P25
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.13W (Ta), 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 420pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.1 Ohm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
250V 4A MOSFET Transistor
285-FQB4P25
250V 4A MOSFET Transistor 285-FQB4P25
MOSFET P-CH 250V 4A D2PAK Product overview: FQB4P25 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 4A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FQB4P25 can be used for catalog matching and distributor lookup.

MOSFET P-CH 250V 4A D2PAK Product overview: FQB4P25 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 4A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FQB4P25 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 067384-FQB4P25 285-FQB4P25
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB4P25 250V 4A MOSFET Transistor
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 250 volts
PD 3130 to 75000 milliwatts 3130 milliwatts
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