onsemi Single FETs, MOSFETs FQB4N80TM

Description
N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)
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Description
N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - FQB4N80TMTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB4N80TMTR-ND
Single FETs, MOSFETs FQB4N80TMTR-ND
N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)

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Single FETs, MOSFETs - FQB4N80TMDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB4N80TMDKR-ND
Single FETs, MOSFETs FQB4N80TMDKR-ND
N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)

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Single FETs, MOSFETs - FQB4N80TMCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB4N80TMCT-ND
Single FETs, MOSFETs FQB4N80TMCT-ND
N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB4N80TM - 1039641-FQB4N80TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB4N80TM
1039641-FQB4N80TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB4N80TM 1039641-FQB4N80TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039641-FQB4N80TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 130W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 3.9A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 880pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3.6 Ohm @ 1.95A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039641-FQB4N80TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 3.9A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 880pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.6 Ohm @ 1.95A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
Quantity per package: 800

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Sheung Wan, Hong Kong
MOSFET 800V N-Channel QFET

MOSFET 800V N-Channel QFET

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB4N80TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQB4N80TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQB4N80TM
MOSFET N-CH 800V 3.9A D2PAK

MOSFET N-CH 800V 3.9A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQB4N80TMTR-ND 1039641-FQB4N80TM FQB4N80TM FQB4N80TM
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB4N80TM MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK (TO-263AB) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 800 volts
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