onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB4N20LTM FQB4N20LTM

Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039640-FQB4N20LTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 3.8A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 5.2nC @ 5V Max Input Capacitance: 310pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.35 Ohm @ 1.9A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance