onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB3P20 FQB3P20

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204278-FQB3P20 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.13W (Ta), 52W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 2.8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 8nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.7 Ohm @ 1.4A, 10V Alternative Parts (Cross-Reference): IRF9610SPBF; SFW9610TM; FQB3P20TM; FQB3P20; Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204278-FQB3P20 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.13W (Ta), 52W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 2.8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 8nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.7 Ohm @ 1.4A, 10V Alternative Parts (Cross-Reference): IRF9610SPBF; SFW9610TM; FQB3P20TM; FQB3P20; Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
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Suppliers

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Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB3P20 - 204278-FQB3P20 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB3P20
204278-FQB3P20
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB3P20 204278-FQB3P20
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204278-FQB3P20 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 3.13W (Ta), 52W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 2.8A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 8nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.7 Ohm @ 1.4A, 10V Alternative Parts (Cross-Reference): IRF9610SPBF; SFW9610TM; FQB3P20TM; FQB3P20; Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204278-FQB3P20
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.13W (Ta), 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 2.8A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 8nC @ 10V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.7 Ohm @ 1.4A, 10V
Alternative Parts (Cross-Reference): IRF9610SPBF; SFW9610TM; FQB3P20TM; FQB3P20;
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
200V 2.8A MOSFET Transistor
285-FQB3P20
200V 2.8A MOSFET Transistor 285-FQB3P20
MOSFET P-CH 200V 2.8A D2PAK Product overview: FQB3P20 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 2.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 2.8A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FQB3P20 can be used for catalog matching and distributor lookup.

MOSFET P-CH 200V 2.8A D2PAK Product overview: FQB3P20 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 2.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 2.8A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FQB3P20 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 204278-FQB3P20 285-FQB3P20
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB3P20 200V 2.8A MOSFET Transistor
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 200 volts
PD 3130 to 52000 milliwatts 3130 milliwatts
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