Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 774718-FQB3N60CTM
Series: QFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Part Status: Obsolete(EOL)
Family Name: FQB3N60C
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: D2PAK (TO-263AB)
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 565pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 75W (Tc)
Rds On (Maximum) @ Id, Vgs: 3.4 Ohm @ 1.5A, 10V
Alternative Parts (Cross-Reference): STB3NB60; STB3NB60T4; STB2N62K3; STB3N62K3;
Introduction Date: September 14, 2004
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
MOSFET N-CH 600V 3A D2PAK
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 774718-FQB3N60CTM | FQB3N60CTM |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB3N60CTM | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 75000 milliwatts |