onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB3N60CTM FQB3N60CTM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774718-FQB3N60CTM Series: QFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Part Status: Obsolete(EOL) Family Name: FQB3N60C Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: D2PAK (TO-263AB) Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 565pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 75W (Tc) Rds On (Maximum) @ Id, Vgs: 3.4 Ohm @ 1.5A, 10V Alternative Parts (Cross-Reference): STB3NB60; STB3NB60T4; STB2N62K3; STB3N62K3; Introduction Date: September 14, 2004 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774718-FQB3N60CTM Series: QFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Part Status: Obsolete(EOL) Family Name: FQB3N60C Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: D2PAK (TO-263AB) Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 565pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 75W (Tc) Rds On (Maximum) @ Id, Vgs: 3.4 Ohm @ 1.5A, 10V Alternative Parts (Cross-Reference): STB3NB60; STB3NB60T4; STB2N62K3; STB3N62K3; Introduction Date: September 14, 2004 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB3N60CTM - 774718-FQB3N60CTM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB3N60CTM
774718-FQB3N60CTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB3N60CTM 774718-FQB3N60CTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774718-FQB3N60CTM Series: QFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Part Status: Obsolete(EOL) Family Name: FQB3N60C Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: D2PAK (TO-263AB) Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 565pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 75W (Tc) Rds On (Maximum) @ Id, Vgs: 3.4 Ohm @ 1.5A, 10V Alternative Parts (Cross-Reference): STB3NB60; STB3NB60T4; STB2N62K3; STB3N62K3; Introduction Date: September 14, 2004 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 774718-FQB3N60CTM
Series: QFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Part Status: Obsolete(EOL)
Family Name: FQB3N60C
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: D2PAK (TO-263AB)
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 565pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 75W (Tc)
Rds On (Maximum) @ Id, Vgs: 3.4 Ohm @ 1.5A, 10V
Alternative Parts (Cross-Reference): STB3NB60; STB3NB60T4; STB2N62K3; STB3N62K3;
Introduction Date: September 14, 2004
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB3N60CTM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQB3N60CTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQB3N60CTM
MOSFET N-CH 600V 3A D2PAK

MOSFET N-CH 600V 3A D2PAK

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 774718-FQB3N60CTM FQB3N60CTM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB3N60CTM Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 75000 milliwatts
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