MOSFET P-CH 100V 33.5A D2PAK
MOSFET P-Channel 100V 33.5A D2PAK
P-Channel 100V 33.5A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D²PAK (TO-263)
P-Channel 100V 33.5A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D²PAK (TO-263)
P-Channel 100V 33.5A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D²PAK (TO-263)
MOSFETs 100V P-Channel QFET Product overview: FQB34P10TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQB34P10TM can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067383-FQB34P10TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Family Name: FQB34P10
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 33.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 2910pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 60 mOhm @ 16.75A, 10V
Alternative Parts (Cross-Reference): IRF5210STRL; AUIRF5210STRR; IRF5210STRR; IRF5210S;
Introduction Date: May 28, 2004
ECCN: EAR99
Country of Origin: China, Malaysia, Republic of Korea
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Motor Drive & Control, Audio
Quantity per package: 800
MOSFET P-CH 100V 33.5A D2PAK
P CHANNEL MOSFET, -100V, 33.5mA, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET Transistor, P Channel, -33.5 A, -100 V, 0.049 ohm, -10 V, -4 V RoHS Compliant: Yes
Transistor: P-MOSFET; unipolar; 100V; 23.5A; 155W; D2PAK; QFET®
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQB34P10TM | 6710891 | 6710891P | FQB34P10TMDKR-ND | 2088-FQB34P10TM | 067383-FQB34P10TM | FQB34P10TM | FQB34P10TM | 60J0798 | 31Y1514 | 598-FQB34P10TM |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | P-Channel 100V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB34P10TM | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | P Channel Mosfet, -100V, 33.5Ma, Full Reel; Channel Type Onsemi | Mosfet Transistor, P Channel, -33.5 A, -100 V, 0.049 Ohm, -10 V, -4 V Rohs Compliant Onsemi | Transistor: P-MOSFET; unipolar; 100V; 23.5A; 155W; D2PAK; QFET® |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||||||
| V(BR)DSS | 100 volts | 100 volts | -100 volts | ||||||||
| IDSS | 33500 milliamps | 33500 milliamps | |||||||||
| PD | 3750 milliwatts | 3.75 milliwatts | 3750 to 155000 milliwatts | 3750 milliwatts |
