onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB34N20LTM FQB34N20LTM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016422-FQB34N20LTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 180W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 31A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 72nC @ 5V Max Input Capacitance: 3900pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 75 mOhm @ 15.5A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Quantity per package: 800
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016422-FQB34N20LTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 180W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 31A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 72nC @ 5V Max Input Capacitance: 3900pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 75 mOhm @ 15.5A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB34N20LTM - 016422-FQB34N20LTM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB34N20LTM
016422-FQB34N20LTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB34N20LTM 016422-FQB34N20LTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016422-FQB34N20LTM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 180W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 31A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 72nC @ 5V Max Input Capacitance: 3900pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 75 mOhm @ 15.5A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016422-FQB34N20LTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 31A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 72nC @ 5V
Max Input Capacitance: 3900pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 75 mOhm @ 15.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FQB34N20LTM - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQB34N20LTM
Single FETs, MOSFETs FQB34N20LTM
MOSFET N-CH 200V 31A D2PAK

MOSFET N-CH 200V 31A D2PAK

Supplier's Site Datasheet
Single FETs, MOSFETs - FQB34N20LTMCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB34N20LTMCT-ND
Single FETs, MOSFETs FQB34N20LTMCT-ND
N-Channel 200V 31A (Tc) 3.13W (Ta), 180W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 200V 31A (Tc) 3.13W (Ta), 180W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FQB34N20LTMTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB34N20LTMTR-ND
Single FETs, MOSFETs FQB34N20LTMTR-ND
N-Channel 200V 31A (Tc) 3.13W (Ta), 180W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 200V 31A (Tc) 3.13W (Ta), 180W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FQB34N20LTMDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB34N20LTMDKR-ND
Single FETs, MOSFETs FQB34N20LTMDKR-ND
N-Channel 200V 31A (Tc) 3.13W (Ta), 180W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 200V 31A (Tc) 3.13W (Ta), 180W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 200V Single

MOSFET 200V Single

Buy Now Datasheet
MOSFET N-CH 200V 31A D2PAK - 598-FQB34N20LTM - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 200V 31A D2PAK
598-FQB34N20LTM
MOSFET N-CH 200V 31A D2PAK 598-FQB34N20LTM
MOSFET N-CH 200V 31A D2PAK

MOSFET N-CH 200V 31A D2PAK

Supplier's Site
N Channel Mosfet, 200V, 31A, D2-Pak, Full Reel; Channel Type Onsemi - 34C0404 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 200V, 31A, D2-Pak, Full Reel; Channel Type Onsemi
34C0404
N Channel Mosfet, 200V, 31A, D2-Pak, Full Reel; Channel Type Onsemi 34C0404
N CHANNEL MOSFET, 200V, 31A, D2-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:31A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2VRoHS Compliant: Yes

N CHANNEL MOSFET, 200V, 31A, D2-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:31A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2VRoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, N Channel, 31 A, 200 V, 75 Mohm, 10 V, 2 V Rohs Compliant Onsemi - 61M6402 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 31 A, 200 V, 75 Mohm, 10 V, 2 V Rohs Compliant Onsemi
61M6402
Mosfet Transistor, N Channel, 31 A, 200 V, 75 Mohm, 10 V, 2 V Rohs Compliant Onsemi 61M6402
MOSFET Transistor, N Channel, 31 A, 200 V, 75 mohm, 10 V, 2 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 31 A, 200 V, 75 mohm, 10 V, 2 V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB34N20LTM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQB34N20LTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQB34N20LTM
MOSFET N-CH 200V 31A D2PAK

MOSFET N-CH 200V 31A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Utmel Electronic Limited Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 016422-FQB34N20LTM FQB34N20LTM FQB34N20LTMCT-ND FQB34N20LTM 598-FQB34N20LTM 34C0404 61M6402 FQB34N20LTM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB34N20LTM Single FETs, MOSFETs Single FETs, MOSFETs MOSFET MOSFET N-CH 200V 31A D2PAK N Channel Mosfet, 200V, 31A, D2-Pak, Full Reel; Channel Type Onsemi Mosfet Transistor, N Channel, 31 A, 200 V, 75 Mohm, 10 V, 2 V Rohs Compliant Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 200 volts 200 volts 200 volts
PD 3130 to 180000 milliwatts 3130 milliwatts 3130 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; SOT3; D2PAK (TO-263AB) TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3 TO-3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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