MOSFET N-CH 200V 31A D2PAK
N-Channel 200V 31A (Tc) 3.13W (Ta), 180W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 200V 31A (Tc) 3.13W (Ta), 180W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 200V 31A (Tc) 3.13W (Ta), 180W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016422-FQB34N20LTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 31A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 72nC @ 5V
Max Input Capacitance: 3900pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 75 mOhm @ 15.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Quantity per package: 800
MOSFET N-CH 200V 31A D2PAK
MOSFET N-CH 200V 31A D2PAK
N CHANNEL MOSFET, 200V, 31A, D2-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:31A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2VRoHS Compliant: Yes
MOSFET Transistor, N Channel, 31 A, 200 V, 75 mohm, 10 V, 2 V RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQB34N20LTM | FQB34N20LTMCT-ND | 016422-FQB34N20LTM | FQB34N20LTM | FQB34N20LTM | 598-FQB34N20LTM | 34C0404 | 61M6402 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB34N20LTM | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 200V 31A D2PAK | N Channel Mosfet, 200V, 31A, D2-Pak, Full Reel; Channel Type Onsemi | Mosfet Transistor, N Channel, 31 A, 200 V, 75 Mohm, 10 V, 2 V Rohs Compliant Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | |||||
| IDSS | 31000 milliamps | 31000 milliamps | ||||||
| PD | 3130 milliwatts | 3130 to 180000 milliwatts | 3130 milliwatts |
