N-Channel 100V 33A (Tc) 3.75W (Ta), 127W (Tc) Surface Mount D²PAK (TO-263)
N-Channel MOSFET, 100V, 33A, 52mR, D2PAK, Surface Mount Product overview: FQB33N10TM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 100V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 100V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQB33N10TM can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 134423-FQB33N10TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 127W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 51nC @ 10V
Max Input Capacitance: 1500pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 52 mOhm @ 16.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Audio, Motor Drive & Control, Industrial
Quantity per package: 800
POWER FIELD-EFFECT TRANSISTOR, 3
MOSFET N-CH 100V 33A D2PAK
N CHANNEL MOSFET, 100V, 33A, D2-PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33A; On Resistance Rds(on):0.04ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
N CHANNEL MOSFET, 100V, 33A, D2-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4VRoHS Compliant: Yes
MOSFET N-CH 100V 33A D2PAK
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQB33N10TMTR-ND | 278-FQB33N10TM | 134423-FQB33N10TM | FQB33N10TM | 67P3508 | 38C7245 | FQB33N10TM | FQB33N10TM |
| Product Name | Single FETs, MOSFETs | N-Channel SMD 100V 33A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB33N10TM | Single FETs, MOSFETs | N Channel Mosfet, 100V, 33A, D2-Pak; Transistor Polarity Onsemi | N Channel Mosfet, 100V, 33A, D2-Pak, Full Reel; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK (TO-263AB) | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3 | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | ||
| PD | 3750 milliwatts | 3750 to 127000 milliwatts | 3750 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| V(BR)DSS | 100 volts | 100 volts |
