onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB33N10TM FQB33N10TM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 134423-FQB33N10TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 127W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 51nC @ 10V Max Input Capacitance: 1500pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 52 mOhm @ 16.5A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Audio, Motor Drive & Control, Industrial Quantity per package: 800
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB33N10TM - 134423-FQB33N10TM - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - FQB33N10TM - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FQB33N10TM - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - FQB33N10TMTR-ND - DigiKey
    DigiKey
  • N Channel Mosfet, 100V, 33A, D2-Pak; Transistor Polarity Onsemi - 67P3508 - Newark, An Avnet Company
    Newark, An Avnet Company
  • N Channel Mosfet, 100V, 33A, D2-Pak, Full Reel; Channel Type Onsemi - 38C7245 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB33N10TM - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 134423-FQB33N10TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 127W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 51nC @ 10V Max Input Capacitance: 1500pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 52 mOhm @ 16.5A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Audio, Motor Drive & Control, Industrial Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB33N10TM - 134423-FQB33N10TM - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB33N10TM
134423-FQB33N10TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB33N10TM 134423-FQB33N10TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 134423-FQB33N10TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.75W (Ta), 127W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 33A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 51nC @ 10V Max Input Capacitance: 1500pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 52 mOhm @ 16.5A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Audio, Motor Drive & Control, Industrial Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 134423-FQB33N10TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 127W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 33A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 51nC @ 10V
Max Input Capacitance: 1500pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 52 mOhm @ 16.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Audio, Motor Drive & Control, Industrial
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FQB33N10TM - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQB33N10TM
Single FETs, MOSFETs FQB33N10TM
POWER FIELD-EFFECT TRANSISTOR, 3

POWER FIELD-EFFECT TRANSISTOR, 3

Supplier's Site Datasheet
Single FETs, MOSFETs - FQB33N10TM - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQB33N10TM
Single FETs, MOSFETs FQB33N10TM
MOSFET N-CH 100V 33A D2PAK

MOSFET N-CH 100V 33A D2PAK

Supplier's Site Datasheet
Single FETs, MOSFETs - FQB33N10TMTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB33N10TMTR-ND
Single FETs, MOSFETs FQB33N10TMTR-ND
N-Channel 100V 33A (Tc) 3.75W (Ta), 127W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 100V 33A (Tc) 3.75W (Ta), 127W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
N Channel Mosfet, 100V, 33A, D2-Pak; Transistor Polarity Onsemi - 67P3508 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 33A, D2-Pak; Transistor Polarity Onsemi
67P3508
N Channel Mosfet, 100V, 33A, D2-Pak; Transistor Polarity Onsemi 67P3508
N CHANNEL MOSFET, 100V, 33A, D2-PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33A; On Resistance Rds(on):0.04ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 33A, D2-PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33A; On Resistance Rds(on):0.04ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

Supplier's Site
N Channel Mosfet, 100V, 33A, D2-Pak, Full Reel; Channel Type Onsemi - 38C7245 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 33A, D2-Pak, Full Reel; Channel Type Onsemi
38C7245
N Channel Mosfet, 100V, 33A, D2-Pak, Full Reel; Channel Type Onsemi 38C7245
N CHANNEL MOSFET, 100V, 33A, D2-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4VRoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 33A, D2-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4VRoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQB33N10TM
MOSFET FQB33N10TM
MOSFET 100V N-Channel QFET

MOSFET 100V N-Channel QFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB33N10TM - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQB33N10TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQB33N10TM
MOSFET N-CH 100V 33A D2PAK

MOSFET N-CH 100V 33A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 134423-FQB33N10TM FQB33N10TM FQB33N10TMTR-ND 67P3508 38C7245 FQB33N10TM FQB33N10TM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB33N10TM Single FETs, MOSFETs Single FETs, MOSFETs N Channel Mosfet, 100V, 33A, D2-Pak; Transistor Polarity Onsemi N Channel Mosfet, 100V, 33A, D2-Pak, Full Reel; Channel Type Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 3750 to 127000 milliwatts 3750 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; SOT3; D2PAK (TO-263AB) TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3 TO-3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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