N-Channel 60V 32A (Tc) 3.75W (Ta), 79W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 136498-FQB30N06LTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.75W (Ta), 79W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 32A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 20nC @ 5V
Max Input Capacitance: 1040pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 35 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Quantity per package: 800
N-Channel Power MOSFET, 60V, 32A, 35mR, D2PAK, Logic Level Product overview: FQB30N06LTM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 32A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 32A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQB30N06LTM can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 32A D2PAK
MOSFET N-CH 60V 32A D2PAK
MOSFET, N CH, 60V, 32A, TO263AB-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:32A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
MOSFET 60V N-Channel QFET Logic Level
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQB30N06LTMTR-ND | 136498-FQB30N06LTM | 278-FQB30N06LTM | FQB30N06LTM | FQB30N06LTM | 31Y1512 | FQB30N06LTM |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB30N06LTM | N-Channel 60V 32A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N Ch, 60V, 32A, To263Ab-3; Channel Type Onsemi | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK (TO-263AB) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3 | ||
| V(BR)DSS | 60 volts | 60 volts | |||||
| PD | 3750 to 79000 milliwatts | 79000 milliwatts | 3750 milliwatts |
