onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB2N60TM FQB2N60TM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774714-FQB2N60TM Series: QFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Part Status: Obsolete(EOL) Family Name: FQB2N60 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: D2PAK (TO-263AB) Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 350pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 3.13W (Ta), 64W (Tc) Rds On (Maximum) @ Id, Vgs: 4.7 Ohm @ 1.2A, 10V Alternative Parts (Cross-Reference): AP4002S; SiHFBC20STL; SiHFBC20STL-E3; STB2N62K3; Introduction Date: May 15, 2000 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774714-FQB2N60TM Series: QFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Part Status: Obsolete(EOL) Family Name: FQB2N60 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: D2PAK (TO-263AB) Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 350pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 3.13W (Ta), 64W (Tc) Rds On (Maximum) @ Id, Vgs: 4.7 Ohm @ 1.2A, 10V Alternative Parts (Cross-Reference): AP4002S; SiHFBC20STL; SiHFBC20STL-E3; STB2N62K3; Introduction Date: May 15, 2000 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB2N60TM - 774714-FQB2N60TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB2N60TM
774714-FQB2N60TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB2N60TM 774714-FQB2N60TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774714-FQB2N60TM Series: QFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Part Status: Obsolete(EOL) Family Name: FQB2N60 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: D2PAK (TO-263AB) Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 350pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 3.13W (Ta), 64W (Tc) Rds On (Maximum) @ Id, Vgs: 4.7 Ohm @ 1.2A, 10V Alternative Parts (Cross-Reference): AP4002S; SiHFBC20STL; SiHFBC20STL-E3; STB2N62K3; Introduction Date: May 15, 2000 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 774714-FQB2N60TM
Series: QFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Part Status: Obsolete(EOL)
Family Name: FQB2N60
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: D2PAK (TO-263AB)
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 350pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 3.13W (Ta), 64W (Tc)
Rds On (Maximum) @ Id, Vgs: 4.7 Ohm @ 1.2A, 10V
Alternative Parts (Cross-Reference): AP4002S; SiHFBC20STL; SiHFBC20STL-E3; STB2N62K3;
Introduction Date: May 15, 2000
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 774714-FQB2N60TM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB2N60TM
PD 3130 to 64000 milliwatts
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