Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016420-FQB27P06TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 27A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 43nC @ 10V
Max Input Capacitance: 1400pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 70 mOhm @ 13.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Lighting, Audio, Motor Drive & Control
Quantity per package: 800
MOSFET P-CH 60V 27A D2PAK
POWER FIELD-EFFECT TRANSISTOR, 2
MOSFETs 60V P-Channel QFET Product overview: FQB27P06TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQB27P06TM can be used for catalog matching and distributor lookup.
P-Channel 60V 27A (Tc) 3.75W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263)
P-Channel 60V 27A (Tc) 3.75W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263)
P-Channel 60V 27A (Tc) 3.75W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263)
MOSFET P-CH 60V 27A D2PAK
MOSFET, P CHANNEL, -60V, 27A, TO-263-3; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:27A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET Transistor, P Channel, -27 A, -60 V, 0.055 ohm, -10 V, -4 V RoHS Compliant: Yes
MOSFET, P; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:27A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:120W RoHS Compliant: Yes
(PRICE/TC),MOSFET TRANSISTOR, P CHANNEL, -27 A, -60 V, 0.055 OHM, -10 V, -4 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 016420-FQB27P06TM | FQB27P06TM | 6710873P | 1661749 | 2088-FQB27P06TM | FQB27P06TMTR-ND | FQB27P06TM | 29X6713 | 47T5067 | 58K1517 | 16125616 | FQB27P06TM |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB27P06TM | Single FETs, MOSFETs | MOSFETs | MOSFETs | P-Channel 60V MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Channel, -60V, 27A, To-263-3; Channel Type Onsemi | Mosfet Transistor, P Channel, -27 A, -60 V, 0.055 Ohm, -10 V, -4 V Rohs Compliant Onsemi | Mosfet, P; Channel Type Onsemi | Transistor | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | ||||
| V(BR)DSS | 60 volts | 60 volts | ||||||||||
| PD | 3750 to 120000 milliwatts | 3750 milliwatts | 3.75 milliwatts | 120000 milliwatts | ||||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||||||
| Package Type | TO-263; SOT3; D2PAK (TO-263AB) | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263 | TO-263; D2pak (to-263) | Reel | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 | TO-3 | TO-3 |
