onsemi Single FETs, MOSFETs FQB1P50TM

P-Channel 500V 1.5A (Tc) 3.13W (Ta), 63W (Tc) Surface Mount D²PAK (TO-263)

P-Channel MOSFET, -500V, -1.5A, 10.5 Ohm, D2PAK, SM Product overview: FQB1P50TM from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -500V, -1.5A, 10.5 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -500V, -1.5A, 10.5 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQB1P50TM can be used for catalog matching and distributor lookup.

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1175228-FQB1P50TM
Series: QFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Family Name: FQB1P50
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: D2PAK (TO-263AB)
Channel Type Type: P
Drain Source Voltage: 500V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 350pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 3.13W (Ta), 63W (Tc)
Rds On (Maximum) @ Id, Vgs: 10.5 Ohm @ 750mA, 10V
Alternative Parts (Cross-Reference): FQB1P50;
Introduction Date: January 01, 2000
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2024
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Quantity per package: 800