onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB1N60TM FQB1N60TM

Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039614-FQB1N60TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 1.2A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 6nC @ 10V Max Input Capacitance: 150pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 11.5 Ohm @ 600mA, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance