MOSFET N-CH 200V 19.4A D2PAK
MOSFETs 200V N-Ch QFET Logic Level Product overview: FQB19N20TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQB19N20TM can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016418-FQB19N20TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 19.4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 150 mOhm @ 9.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Quantity per package: 800
N-Channel 200V 19.4A (Tc) 3.13W (Ta), 140W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 200V 19.4A (Tc) 3.13W (Ta), 140W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 200V 19.4A (Tc) 3.13W (Ta), 140W (Tc) Surface Mount D²PAK (TO-263)
MOSFET N-CH 200V 19.4A D2PAK
MOSFET, N-CH, 200V, 19.4A, TO-263-3; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:19.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FQB19N20TM | 2088-FQB19N20TM | 016418-FQB19N20TM | FQB19N20TMTR-ND | FQB19N20TM | 38C7244 |
| Product Name | Single FETs, MOSFETs | 200V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB19N20TM | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 200V, 19.4A, To-263-3; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 200 volts | 200 volts | ||||
| IDSS | 19400 milliamps | 19400 milliamps | ||||
| PD | 3130 milliwatts | 3.13 milliwatts | 3130 to 140000 milliwatts |
