onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB19N20TM FQB19N20TM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016418-FQB19N20TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 19.4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 150 mOhm @ 9.7A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance Quantity per package: 800
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016418-FQB19N20TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 19.4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 150 mOhm @ 9.7A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB19N20TM - 016418-FQB19N20TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB19N20TM
016418-FQB19N20TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB19N20TM 016418-FQB19N20TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016418-FQB19N20TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 19.4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 150 mOhm @ 9.7A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016418-FQB19N20TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 19.4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 150 mOhm @ 9.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Single FETs, MOSFETs - FQB19N20TMTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB19N20TMTR-ND
Single FETs, MOSFETs FQB19N20TMTR-ND
N-Channel 200V 19.4A (Tc) 3.13W (Ta), 140W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 200V 19.4A (Tc) 3.13W (Ta), 140W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FQB19N20TMDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB19N20TMDKR-ND
Single FETs, MOSFETs FQB19N20TMDKR-ND
N-Channel 200V 19.4A (Tc) 3.13W (Ta), 140W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 200V 19.4A (Tc) 3.13W (Ta), 140W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - FQB19N20TMCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB19N20TMCT-ND
Single FETs, MOSFETs FQB19N20TMCT-ND
N-Channel 200V 19.4A (Tc) 3.13W (Ta), 140W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 200V 19.4A (Tc) 3.13W (Ta), 140W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Singapore
200V MOSFET Transistor
2088-FQB19N20TM
200V MOSFET Transistor 2088-FQB19N20TM
MOSFETs 200V N-Ch QFET Logic Level Product overview: FQB19N20TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQB19N20TM can be used for catalog matching and distributor lookup.

MOSFETs 200V N-Ch QFET Logic Level Product overview: FQB19N20TM from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FQB19N20TM can be used for catalog matching and distributor lookup.

Supplier's Site
Mosfet, N-Ch, 200V, 19.4A, To-263-3; Channel Type Onsemi - 38C7244 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 200V, 19.4A, To-263-3; Channel Type Onsemi
38C7244
Mosfet, N-Ch, 200V, 19.4A, To-263-3; Channel Type Onsemi 38C7244
MOSFET, N-CH, 200V, 19.4A, TO-263-3; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:19.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

MOSFET, N-CH, 200V, 19.4A, TO-263-3; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:19.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB19N20TM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQB19N20TM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQB19N20TM
MOSFET N-CH 200V 19.4A D2PAK

MOSFET N-CH 200V 19.4A D2PAK

Supplier's Site
Single FETs, MOSFETs - FQB19N20TM - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FQB19N20TM
Single FETs, MOSFETs FQB19N20TM
MOSFET N-CH 200V 19.4A D2PAK

MOSFET N-CH 200V 19.4A D2PAK

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 016418-FQB19N20TM FQB19N20TMTR-ND 2088-FQB19N20TM 38C7244 FQB19N20TM FQB19N20TM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB19N20TM Single FETs, MOSFETs 200V MOSFET Transistor Mosfet, N-Ch, 200V, 19.4A, To-263-3; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 200 volts 200 volts
PD 3130 to 140000 milliwatts 3.13 milliwatts 3130 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; SOT3; D2PAK (TO-263AB) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Reel TO-3; TO-263 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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