onsemi Single FETs, MOSFETs FQB12N60CTM

Description
N-Channel 600V 12A (Tc) 3.13W (Ta), 225W (Tc) Surface Mount D²PAK (TO-263)
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Description
N-Channel 600V 12A (Tc) 3.13W (Ta), 225W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

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Single FETs, MOSFETs - FQB12N60CTM-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQB12N60CTM-ND
Single FETs, MOSFETs FQB12N60CTM-ND
N-Channel 600V 12A (Tc) 3.13W (Ta), 225W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 12A (Tc) 3.13W (Ta), 225W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB12N60CTM - 1175210-FQB12N60CTM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB12N60CTM
1175210-FQB12N60CTM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB12N60CTM 1175210-FQB12N60CTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1175210-FQB12N60CTM Series: QFET Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Part Status: Obsolete(EOL) Family Name: FQB12N60C Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: D2PAK (TO-263AB) Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2290pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 3.13W (Ta), 225W (Tc) Rds On (Maximum) @ Id, Vgs: 650 mOhm @ 6A, 10V Alternative Parts (Cross-Reference): AOB12N60FDL; R6504KNJTL; R6507KNJTL; Introduction Date: October 20, 2003 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1175210-FQB12N60CTM
Series: QFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Part Status: Obsolete(EOL)
Family Name: FQB12N60C
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: D2PAK (TO-263AB)
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 63nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2290pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 3.13W (Ta), 225W (Tc)
Rds On (Maximum) @ Id, Vgs: 650 mOhm @ 6A, 10V
Alternative Parts (Cross-Reference): AOB12N60FDL; R6504KNJTL; R6507KNJTL;
Introduction Date: October 20, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQB12N60CTM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQB12N60CTM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQB12N60CTM
MOSFET N-CH 600V 12A D2PAK

MOSFET N-CH 600V 12A D2PAK

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQB12N60CTM-ND 1175210-FQB12N60CTM FQB12N60CTM
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB12N60CTM Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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