onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB10N50CFTM_WS FQB10N50CFTM_WS

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774709-FQB10N50CFTM_ WS Series: FRFET, QFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Family Name: FQB10N50CF Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: D2PAK (TO-263AB) Channel Type Type: N Drain Source Voltage: 500V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2210pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 143W (Tc) Rds On (Maximum) @ Id, Vgs: 610 mOhm @ 5A, 10V Alternative Parts (Cross-Reference): STB10NB50; STB10NB50T4; PHB11N50E; STB8NC50T4; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774709-FQB10N50CFTM_ WS Series: FRFET, QFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Family Name: FQB10N50CF Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: D2PAK (TO-263AB) Channel Type Type: N Drain Source Voltage: 500V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2210pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 143W (Tc) Rds On (Maximum) @ Id, Vgs: 610 mOhm @ 5A, 10V Alternative Parts (Cross-Reference): STB10NB50; STB10NB50T4; PHB11N50E; STB8NC50T4; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB10N50CFTM_WS - 774709-FQB10N50CFTM_WS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB10N50CFTM_WS
774709-FQB10N50CFTM_WS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB10N50CFTM_WS 774709-FQB10N50CFTM_WS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774709-FQB10N50CFTM_ WS Series: FRFET, QFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Family Name: FQB10N50CF Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: D2PAK (TO-263AB) Channel Type Type: N Drain Source Voltage: 500V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2210pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 143W (Tc) Rds On (Maximum) @ Id, Vgs: 610 mOhm @ 5A, 10V Alternative Parts (Cross-Reference): STB10NB50; STB10NB50T4; PHB11N50E; STB8NC50T4; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 774709-FQB10N50CFTM_WS
Series: FRFET, QFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Family Name: FQB10N50CF
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: D2PAK (TO-263AB)
Channel Type Type: N
Drain Source Voltage: 500V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2210pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 143W (Tc)
Rds On (Maximum) @ Id, Vgs: 610 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): STB10NB50; STB10NB50T4; PHB11N50E; STB8NC50T4;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 774709-FQB10N50CFTM_WS
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB10N50CFTM_WS
PD 143000 milliwatts
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