onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB10N20TM FQB10N20TM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067378-FQB10N20TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 670pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 360 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067378-FQB10N20TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 670pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 360 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB10N20TM - 067378-FQB10N20TM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB10N20TM
067378-FQB10N20TM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB10N20TM 067378-FQB10N20TM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067378-FQB10N20TM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 670pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 360 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067378-FQB10N20TM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 670pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 360 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 067378-FQB10N20TM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQB10N20TM
Polarity N-Channel; N-Channel
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