N-Channel 800V 5.9A (Tc) 107W (Tc) Through Hole TO-3PF
Manufacturer: ON Semiconductor
Win Source Part Number: 1175198-FQAF8N80
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: TO-3P-3 Full Pack
Power Dissipation (Maximum): 107W
Alternative Parts (Cross-Reference): IRFPE50PBF; STW8NC80Z; FQAF8N80_NL;
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 360
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 800V
Id - Continuous Drain Current: 5.9A
Rds On (Maximum) at Id, Vgs: 1.2Ohm at 2.95A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 57nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 2350pF at 25V
MOSFET N-CH 800V 5.9A TO3PF
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FQAF8N80-ND | 1175198-FQAF8N80 | FQAF8N80 |
| Product Name | Single FETs, MOSFETs | FETs - Single - FQAF8N80 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | |
| Package Type | TO-3; TO-3P-3 Full Pack | TO-3; SOT3 | TO-3P-3 Full Pack |
| V(BR)DSS | 800 volts |
