onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF6N80 FQAF6N80

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774708-FQAF6N80 Series: QFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: SC-94 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Part Status: Obsolete(EOL) Family Name: FQAF6N80 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-3PF Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1500pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 90W (Tc) Rds On (Maximum) @ Id, Vgs: 1.95 Ohm @ 2.2A, 10V Alternative Parts (Cross-Reference): IRFPE40; IRFPE40PBF; SiHFPE450-E3; SiHFPE450; Introduction Date: November 02, 2000 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774708-FQAF6N80 Series: QFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: SC-94 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Part Status: Obsolete(EOL) Family Name: FQAF6N80 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-3PF Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1500pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 90W (Tc) Rds On (Maximum) @ Id, Vgs: 1.95 Ohm @ 2.2A, 10V Alternative Parts (Cross-Reference): IRFPE40; IRFPE40PBF; SiHFPE450-E3; SiHFPE450; Introduction Date: November 02, 2000 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited
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Product
Description
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF6N80 - 774708-FQAF6N80 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF6N80
774708-FQAF6N80
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF6N80 774708-FQAF6N80
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 774708-FQAF6N80 Series: QFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: SC-94 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Part Status: Obsolete(EOL) Family Name: FQAF6N80 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-3PF Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1500pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 90W (Tc) Rds On (Maximum) @ Id, Vgs: 1.95 Ohm @ 2.2A, 10V Alternative Parts (Cross-Reference): IRFPE40; IRFPE40PBF; SiHFPE450-E3; SiHFPE450; Introduction Date: November 02, 2000 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 774708-FQAF6N80
Series: QFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: SC-94
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Part Status: Obsolete(EOL)
Family Name: FQAF6N80
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-3PF
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 31nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1500pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 90W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.95 Ohm @ 2.2A, 10V
Alternative Parts (Cross-Reference): IRFPE40; IRFPE40PBF; SiHFPE450-E3; SiHFPE450;
Introduction Date: November 02, 2000
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - FQAF6N80-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQAF6N80-ND
Single FETs, MOSFETs FQAF6N80-ND
N-Channel 800V 4.4A (Tc) 90W (Tc) Through Hole TO-3PF

N-Channel 800V 4.4A (Tc) 90W (Tc) Through Hole TO-3PF

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQAF6N80 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQAF6N80
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQAF6N80
MOSFET N-CH 800V 4.4A TO3PF

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Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 774708-FQAF6N80 FQAF6N80-ND FQAF6N80
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF6N80 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 90000 milliwatts
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