onsemi FETs - Single - FQAF33N10 FQAF33N10

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1175186-FQAF33N10 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-3PF Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-3P-3 Full Pack Power Dissipation (Maximum): 83W Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 360 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 25.8A Rds On (Maximum) at Id, Vgs: 52mOhm at 12.9A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 51nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1500pF at 25V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1175186-FQAF33N10 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-3PF Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-3P-3 Full Pack Power Dissipation (Maximum): 83W Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 360 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 25.8A Rds On (Maximum) at Id, Vgs: 52mOhm at 12.9A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 51nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1500pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - FQAF33N10 - 1175186-FQAF33N10 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FQAF33N10
1175186-FQAF33N10
FETs - Single - FQAF33N10 1175186-FQAF33N10
Manufacturer: ON Semiconductor Win Source Part Number: 1175186-FQAF33N10 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-3PF Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-3P-3 Full Pack Power Dissipation (Maximum): 83W Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 360 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 25.8A Rds On (Maximum) at Id, Vgs: 52mOhm at 12.9A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 51nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 1500pF at 25V

Manufacturer: ON Semiconductor
Win Source Part Number: 1175186-FQAF33N10
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-3P-3 Full Pack
Power Dissipation (Maximum): 83W
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 360
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 25.8A
Rds On (Maximum) at Id, Vgs: 52mOhm at 12.9A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 51nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 1500pF at 25V

Buy Now
Single FETs, MOSFETs - FQAF33N10-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQAF33N10-ND
Single FETs, MOSFETs FQAF33N10-ND
N-Channel 100V 25.8A (Tc) 83W (Tc) Through Hole TO-3PF

N-Channel 100V 25.8A (Tc) 83W (Tc) Through Hole TO-3PF

Buy Now Datasheet
Singapore
100V 25.8A 3PF MOSFET Transistor
278-FQAF33N10
100V 25.8A 3PF MOSFET Transistor 278-FQAF33N10
Trans MOSFET N-CH 100V 25.8A 3-Pin(3+Tab) TO-3PF Rail Product overview: FQAF33N10 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 25.8A, 3PF. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 25.8A, 3PF, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQAF33N10 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 100V 25.8A 3-Pin(3+Tab) TO-3PF Rail Product overview: FQAF33N10 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 25.8A, 3PF. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 25.8A, 3PF, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQAF33N10 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQAF33N10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQAF33N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQAF33N10
MOSFET N-CH 100V 25.8A TO3PF

MOSFET N-CH 100V 25.8A TO3PF

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1175186-FQAF33N10 FQAF33N10-ND 278-FQAF33N10 FQAF33N10
Product Name FETs - Single - FQAF33N10 Single FETs, MOSFETs 100V 25.8A 3PF MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 100 volts
PD 83000 milliwatts 83000 milliwatts
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