N-Channel 600V 11.2A (Tc) 120W (Tc) Through Hole TO-3PF
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204270-FQAF19N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PF
Dimension: SC-94
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11.2A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 90nC @ 10V
Max Input Capacitance: 3600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 380 mOhm @ 5.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
MOSFET N-CH 600V 11.2A TO3PF
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FQAF19N60-ND | 204270-FQAF19N60 | FQAF19N60 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF19N60 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | |
| Package Type | TO-3; TO-3P-3 Full Pack | TO-3; SOT3; TO-3PF | TO-3P-3 Full Pack |
| V(BR)DSS | 600 volts |
