onsemi Single FETs, MOSFETs FQAF16N50

Description
N-Channel 500V 11.3A (Tc) 110W (Tc) Through Hole TO-3PF
Request a Quote Datasheet
Description
N-Channel 500V 11.3A (Tc) 110W (Tc) Through Hole TO-3PF
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQAF16N50-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQAF16N50-ND
Single FETs, MOSFETs FQAF16N50-ND
N-Channel 500V 11.3A (Tc) 110W (Tc) Through Hole TO-3PF

N-Channel 500V 11.3A (Tc) 110W (Tc) Through Hole TO-3PF

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF16N50 - 1039586-FQAF16N50 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF16N50
1039586-FQAF16N50
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF16N50 1039586-FQAF16N50
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039586-FQAF16N50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PF Dimension: SC-94 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 11.3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 75nC @ 10V Max Input Capacitance: 3000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 320 mOhm @ 5.65A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Sufficient Quantity per package: 360

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039586-FQAF16N50
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PF
Dimension: SC-94
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 11.3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 75nC @ 10V
Max Input Capacitance: 3000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 320 mOhm @ 5.65A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient
Quantity per package: 360

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQAF16N50 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQAF16N50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQAF16N50
MOSFET N-CH 500V 11.3A TO3PF

MOSFET N-CH 500V 11.3A TO3PF

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 500V N-Channel QFET

MOSFET 500V N-Channel QFET

Buy Now Datasheet
Mosfet, N-Ch, 500V, 11.3A, 150Deg C/110W Rohs Compliant Onsemi - 54AH8740 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 11.3A, 150Deg C/110W Rohs Compliant Onsemi
54AH8740
Mosfet, N-Ch, 500V, 11.3A, 150Deg C/110W Rohs Compliant Onsemi 54AH8740
MOSFET, N-CH, 500V, 11.3A, 150DEG C/110W ROHS COMPLIANT: YES

MOSFET, N-CH, 500V, 11.3A, 150DEG C/110W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number FQAF16N50-ND 1039586-FQAF16N50 FQAF16N50 FQAF16N50 54AH8740
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF16N50 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 500V, 11.3A, 150Deg C/110W Rohs Compliant Onsemi
Polarity N-Channel N-Channel; N-Channel
Package Type TO-3; TO-3P-3 Full Pack TO-3; SOT3; TO-3PF TO-3P-3 Full Pack TO-3
V(BR)DSS 500 volts
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