onsemi FETs - Single - FQAF16N25 FQAF16N25

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1175183-FQAF16N25 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-3PF Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-3P-3 Full Pack Power Dissipation (Maximum): 85W Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 360 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 250V Id - Continuous Drain Current: 12.4A Rds On (Maximum) at Id, Vgs: 230mOhm at 6.2A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 35nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 1200pF at 25V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1175183-FQAF16N25 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-3PF Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-3P-3 Full Pack Power Dissipation (Maximum): 85W Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 360 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 250V Id - Continuous Drain Current: 12.4A Rds On (Maximum) at Id, Vgs: 230mOhm at 6.2A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 35nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 1200pF at 25V
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Suppliers

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Product
Description
Supplier Links
FETs - Single - FQAF16N25 - 1175183-FQAF16N25 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FQAF16N25
1175183-FQAF16N25
FETs - Single - FQAF16N25 1175183-FQAF16N25
Manufacturer: ON Semiconductor Win Source Part Number: 1175183-FQAF16N25 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-3PF Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-3P-3 Full Pack Power Dissipation (Maximum): 85W Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 360 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 250V Id - Continuous Drain Current: 12.4A Rds On (Maximum) at Id, Vgs: 230mOhm at 6.2A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 35nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 1200pF at 25V

Manufacturer: ON Semiconductor
Win Source Part Number: 1175183-FQAF16N25
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-3P-3 Full Pack
Power Dissipation (Maximum): 85W
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 360
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 250V
Id - Continuous Drain Current: 12.4A
Rds On (Maximum) at Id, Vgs: 230mOhm at 6.2A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 35nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 1200pF at 25V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQAF16N25 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQAF16N25
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQAF16N25
MOSFET N-CH 250V 12.4A TO3PF

MOSFET N-CH 250V 12.4A TO3PF

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1175183-FQAF16N25 FQAF16N25
Product Name FETs - Single - FQAF16N25 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 250 volts
PD 85000 milliwatts
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