onsemi Single FETs, MOSFETs FQAF12N60

Description
N-Channel 600V 7.8A (Tc) 100W (Tc) Through Hole TO-3PF
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Description
N-Channel 600V 7.8A (Tc) 100W (Tc) Through Hole TO-3PF
Request a Quote Datasheet

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Single FETs, MOSFETs - FQAF12N60-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQAF12N60-ND
Single FETs, MOSFETs FQAF12N60-ND
N-Channel 600V 7.8A (Tc) 100W (Tc) Through Hole TO-3PF

N-Channel 600V 7.8A (Tc) 100W (Tc) Through Hole TO-3PF

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF12N60 - 1175179-FQAF12N60 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF12N60
1175179-FQAF12N60
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF12N60 1175179-FQAF12N60
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1175179-FQAF12N60 Series: QFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: SC-94 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Part Status: Obsolete(EOL) Family Name: FQAF12N60 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.fairchildsemi.co m RoHS State: Request Verification Manufacturer Package: TO-3PF Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1900pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 100W (Tc) Rds On (Maximum) @ Id, Vgs: 700 mOhm @ 3.9A, 10V Alternative Parts (Cross-Reference): SPW07N60CFD; SPW07N60CFDXK; STW10N95K5; Introduction Date: May 16, 2000 ECCN: EAR99 Estimated EOL Date: Obsolete Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1175179-FQAF12N60
Series: QFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: SC-94
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Part Status: Obsolete(EOL)
Family Name: FQAF12N60
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.fairchildsemi.com
RoHS State: Request Verification
Manufacturer Package: TO-3PF
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 54nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1900pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 100W (Tc)
Rds On (Maximum) @ Id, Vgs: 700 mOhm @ 3.9A, 10V
Alternative Parts (Cross-Reference): SPW07N60CFD; SPW07N60CFDXK; STW10N95K5;
Introduction Date: May 16, 2000
ECCN: EAR99
Estimated EOL Date: Obsolete
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQAF12N60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQAF12N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQAF12N60
MOSFET N-CH 600V 7.8A TO3PF

MOSFET N-CH 600V 7.8A TO3PF

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQAF12N60-ND 1175179-FQAF12N60 FQAF12N60
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF12N60 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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