onsemi Single FETs, MOSFETs FQAF11N90

Description
N-Channel 900V 7.2A (Tc) 120W (Tc) Through Hole TO-3PF
Request a Quote Datasheet
Description
N-Channel 900V 7.2A (Tc) 120W (Tc) Through Hole TO-3PF
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQAF11N90-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQAF11N90-ND
Single FETs, MOSFETs FQAF11N90-ND
N-Channel 900V 7.2A (Tc) 120W (Tc) Through Hole TO-3PF

N-Channel 900V 7.2A (Tc) 120W (Tc) Through Hole TO-3PF

Buy Now Datasheet
FETs - Single - FQAF11N90 - 1175178-FQAF11N90 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FQAF11N90
1175178-FQAF11N90
FETs - Single - FQAF11N90 1175178-FQAF11N90
Manufacturer: ON Semiconductor Win Source Part Number: 1175178-FQAF11N90 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-3PF Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-3P-3 Full Pack Power Dissipation (Maximum): 120W Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 360 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 900V Id - Continuous Drain Current: 7.2A Rds On (Maximum) at Id, Vgs: 960mOhm at 3.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 94nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 3500pF at 25V

Manufacturer: ON Semiconductor
Win Source Part Number: 1175178-FQAF11N90
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-3P-3 Full Pack
Power Dissipation (Maximum): 120W
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 360
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 900V
Id - Continuous Drain Current: 7.2A
Rds On (Maximum) at Id, Vgs: 960mOhm at 3.6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 94nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 3500pF at 25V

Buy Now
Singapore
900V 7.2A 120W MOSFET Transistor
278-FQAF11N90
900V 7.2A 120W MOSFET Transistor 278-FQAF11N90
900V N-CH MOSFET 7.2A 120W TO-3PF Product overview: FQAF11N90 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 7.2A, 120W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 7.2A, 120W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQAF11N90 can be used for catalog matching and distributor lookup.

900V N-CH MOSFET 7.2A 120W TO-3PF Product overview: FQAF11N90 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 7.2A, 120W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 7.2A, 120W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQAF11N90 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQAF11N90 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQAF11N90
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQAF11N90
MOSFET N-CH 900V 7.2A TO3PF

MOSFET N-CH 900V 7.2A TO3PF

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQAF11N90-ND 1175178-FQAF11N90 278-FQAF11N90 FQAF11N90
Product Name Single FETs, MOSFETs FETs - Single - FQAF11N90 900V 7.2A 120W MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-3; TO-3P-3 Full Pack TO-3; SOT3 TO-3P-3 Full Pack
V(BR)DSS 900 volts
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