Manufacturer: ON Semiconductor
Win Source Part Number: 1175178-FQAF11N90
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: TO-3P-3 Full Pack
Power Dissipation (Maximum): 120W
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 360
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 900V
Id - Continuous Drain Current: 7.2A
Rds On (Maximum) at Id, Vgs: 960mOhm at 3.6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 94nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 3500pF at 25V
N-Channel 900V 7.2A (Tc) 120W (Tc) Through Hole TO-3PF
MOSFET N-CH 900V 7.2A TO3PF
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1175178-FQAF11N90 | FQAF11N90-ND | FQAF11N90 |
| Product Name | FETs - Single - FQAF11N90 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 900 volts | ||
| PD | 120000 milliwatts |
