Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039580-FQAF10N80
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 113W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PF
Dimension: SC-94
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 6.7A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 71nC @ 10V
Max Input Capacitance: 2700pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.05 Ohm @ 3.35A, 10V
Alternative Parts (Cross-Reference): IXFH10N80P; FQA10N80_NL; FQAF10N80; FQA10N80;
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
N-Channel 800V 6.7A (Tc) 113W (Tc) Through Hole TO-3PF
Trans MOSFET N-CH 800V 6.7A 3-Pin(3+Tab) TO-3PF Rail
MOSFET N-CH 800V 6.7A TO3PF
| Win Source Electronics | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1039580-FQAF10N80 | FQAF10N80-ND | 598-FQAF10N80 | FQAF10N80 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF10N80 | Single FETs, MOSFETs | Trans MOSFET N-CH 800V 6.7A 3-Pin(3+Tab) TO-3PF Rail | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 800 volts | |||
| PD | 113000 milliwatts | 113000 milliwatts |
