onsemi Single FETs, MOSFETs FQAF10N80

Description
N-Channel 800V 6.7A (Tc) 113W (Tc) Through Hole TO-3PF
Request a Quote Datasheet
Description
N-Channel 800V 6.7A (Tc) 113W (Tc) Through Hole TO-3PF
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQAF10N80-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQAF10N80-ND
Single FETs, MOSFETs FQAF10N80-ND
N-Channel 800V 6.7A (Tc) 113W (Tc) Through Hole TO-3PF

N-Channel 800V 6.7A (Tc) 113W (Tc) Through Hole TO-3PF

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF10N80 - 1039580-FQAF10N80 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF10N80
1039580-FQAF10N80
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF10N80 1039580-FQAF10N80
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039580-FQAF10N80 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 113W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PF Dimension: SC-94 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 6.7A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 71nC @ 10V Max Input Capacitance: 2700pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.05 Ohm @ 3.35A, 10V Alternative Parts (Cross-Reference): IXFH10N80P; FQA10N80_NL; FQAF10N80; FQA10N80; Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039580-FQAF10N80
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 113W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PF
Dimension: SC-94
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 6.7A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 71nC @ 10V
Max Input Capacitance: 2700pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.05 Ohm @ 3.35A, 10V
Alternative Parts (Cross-Reference): IXFH10N80P; FQA10N80_NL; FQAF10N80; FQA10N80;
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Trans MOSFET N-CH 800V 6.7A 3-Pin(3+Tab) TO-3PF Rail - 598-FQAF10N80 - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 800V 6.7A 3-Pin(3+Tab) TO-3PF Rail
598-FQAF10N80
Trans MOSFET N-CH 800V 6.7A 3-Pin(3+Tab) TO-3PF Rail 598-FQAF10N80
Trans MOSFET N-CH 800V 6.7A 3-Pin(3+Tab) TO-3PF Rail

Trans MOSFET N-CH 800V 6.7A 3-Pin(3+Tab) TO-3PF Rail

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQAF10N80 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQAF10N80
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQAF10N80
MOSFET N-CH 800V 6.7A TO3PF

MOSFET N-CH 800V 6.7A TO3PF

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQAF10N80-ND 1039580-FQAF10N80 598-FQAF10N80 FQAF10N80
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF10N80 Trans MOSFET N-CH 800V 6.7A 3-Pin(3+Tab) TO-3PF Rail Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-3; TO-3P-3 Full Pack TO-3; SOT3; TO-3PF TO-3P-3 Full Pack
V(BR)DSS 800 volts
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